Abstract
In this chapter, a review of uniaxial s-Si MOSFET physics, modeling issues and approaches has been done. The semi analytical model developed in this chapter shows an increase of electron mobility with the applied uniaxial strain at a given electrical field.
Keywords
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Notes
- 1.
The text/figures/equations/references etc. associated with [215] have been republished/reorganized from the paper [215] Amit Chaudhry, Sonu Sangwan and Jatindra Nath Roy, “Modeling of Some Electrical Parameters of a MOSFET under Uniaxial Stress”, Journal of Computational Electronics, Vol.10, No.4, pp. 437–442, 2011 with due permission from the publisher.
- 2.
The text/figures/equations/references etc. associated with [221] have been republished from the paper [221] Amit Chaudhry, Sonu Sangwan and Jatindra Nath Roy, “Mobility Modeling in a p-MOSFET Under Uniaxial Stress”, Elektrotehniski Vestnik, Vol. 78, No. 5, pp. 298–303,2011 with due permission from the publisher.
- 3.
The text/figures/equations/references etc. associated with [225] have been republished/reorganized from the paper [225] Amit Chaudhry, Sonu Sangwan and Jatindra Nath Roy, “Threshold Voltage and Drain Current Modeling of Uniaxial Strained p-MOSFETs”, Journal of Nano and Electronic Physics, Vol.3, No.4, pp. 27–31, 2011.with due permission from the publisher.
References
Chaudhry A, Roy JN, Joshi G (2010) Nanoscale strained- Si MOSFET physics and modeling approaches: a review. J Semiconduct 31(10):400-1–400-6
Kastalsky AA, Shur MS (1981) Conductance of small semiconductor devices. Solid-State Commun 39(6):715–718
Tsai M-N et al (2006) Temperature effects of n-MOSFET devices with uniaxial mechanical strains. Electrochem Solid-St 9(8):276–278
Ungersboeck E (2006) Electron inversion layer mobility enhancement by uniaxial stress on (001) and (110) oriented MOSFETs, Proceedings of SISPAD, pp 43–46
Koganemaru M et al (2010) Experimental study of uniaxial-stress effects on DC characteristics of nMOSFETs. IEEE T Compon Pack T 33(2):278–286
Tan Y et al (2008) Analytical electron-mobility model for arbitrarily stressed silicon. IEEE T Electron Dev 55(6):1386–1390
Ken Shimizu, Toshiro Hiramoto (2007) Mobility enhancement in uniaxially strained (110) oriented ultra-thin body single- and double-gate MOSFETs with SOI thickness of less than 4 nm, International Electron Devices Meeting (IEDM), USA, pp 715–718
Zhao W, He J, Belford RE, Wernersson L-E, Seabaugh A (2004) Partially depleted SOI MOSFETs under uniaxial tensile strain. IEEE T Electron Dev 51(3):317–323
Lauer I, Antoniadis DA (2005) Enhancement of electron mobility in ultrathin-body silicon-on-insulator MOSFETs with uniaxial strain. IEEE Electron Devic Lett 26(5):314–316
Dhar S et al (2007) Electron mobility model for 110 stressed silicon including strain-dependent mass. IEEE T Nanotechnology 6(1):97–100
Chaudhry A, Sangwan S, Roy JN (2011) Modeling of some electrical parameters of a MOSFET under uniaxial stress. J Comput Electron 10(4):437–442
Lim JS et al (2004) Comparison of threshold-voltage shifts for uniaxial and biaxial tensile -stressed n–MOSFETs. IEEE Electron Devic Lett 25(11):731–733
Shifren L et al (2004) Drive current enhancement in p-type metal –oxide –semiconductor field effect transistors under shear uniaxial stress. Appl Phys Lett 85(25):6188–6190
Uchida et al (2005) Performance enhancement of p MOSFETs depending on strain, channel direction and material, Proceedings of international conference on Simulation of Semiconductor Processes and Devices, (SISPAD), pp 315–318
Shuo Z et al (2006) Impacts of additive strain on hole mobility in bulk Si and strained –Si p-MOSFETs. J Semicoduct 30(10):1–6
Gaubert P, Teramoto A, Ohmi T (2010) Modeling of the hole mobility in p- channel MOS transistors fabricated on (110) oriented Si wafers. Solid State Electron 54:420–426
Chaudhry A, Sangwan S, Roy JN (2011) Mobility modeling in a p-MOSFET under uniaxial stress. Elektrotehniski Vestn 78(5):298–303
Belford Rona E, Wei Zhao, Potashnik J, Qingmin Liu, Alan Seabaugh (2002) Performance-augmented CMOS using back-end uniaxial strain Device Research Conference, pp 41–42
Wacker N, Richter H, Hassan M-U, Rempp H, Burghartz JN (2011) Compact modeling of CMOS transistors under variable uniaxial stress. Solid State Electron 57(1):52–60
Bufler FM, Tsibizov A, Erlebach A (2006) Scaling of bulk pMOSFETs: (110) surface orientation versus uniaxial compressive stress. IEEE Electron Devic Lett 27(12):992–994
Chaudhry A, Sangwan S, Roy JN (2011) Threshold voltage and drain current modeling of uniaxial strained p-MOSFETs. J Nano Electron P 3(4):27–31
Author information
Authors and Affiliations
Rights and permissions
Copyright information
© 2013 Springer Science+Business Media New York
About this chapter
Cite this chapter
Chaudhry, A. (2013). Uniaxial s-Si Technology. In: Fundamentals of Nanoscaled Field Effect Transistors. Springer, New York, NY. https://doi.org/10.1007/978-1-4614-6822-6_7
Download citation
DOI: https://doi.org/10.1007/978-1-4614-6822-6_7
Published:
Publisher Name: Springer, New York, NY
Print ISBN: 978-1-4614-6821-9
Online ISBN: 978-1-4614-6822-6
eBook Packages: EngineeringEngineering (R0)