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Nanoscale Effects: Inversion Layer Quantization

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Abstract

In this chapter, inversion layer quantization effects on carrier distribution in poly-Si gate, p-type, and n-type substrate are studied. The two approaches viz. triangular well and variation approach for inversion layer quantization are discussed. The capacitance and drain current are also modeled under the inversion layer quantization conditions.

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Notes

  1. 1.

    The text/figures/equations/references etc. associated with [77] are republished/reorganized from the paper [77], Amit Chaudhry and J.N. Roy, “A Comparative Study of Hole and Electron Inversion layer Quantization in MOS Structures”, Serbian Journal of Electrical Engineering, Vol. 7, No 2, pp. 185–193, Nov, 2010 with due permission from the publisher.

  2. 2.

    The text/ figures/equations/references etc associated with [79] have been republished/reorganized from the paper [79], Amit Chaudhry and J.N. Roy, “Inversion layer Quantization in Arbitrarily Oriented Substrates: An Analytical Study”, Elektrica-UTM Journal of Electrical Engineering, Vol.12, No 1, pp.1–6, 2010 with due permission from the publisher.

  3. 3.

    The text/figures/equations/references etc. associated with [83] have been republished/reorganized from the paper [83] Amit Chaudhry and Jatindra Nath Roy, “Analytical Modeling of Gate Capacitance of an Ultra Thin Oxide MOS Capacitor: A Quantum Mechanical Study”, Journal of Electron Devices, Vol. 10, pp. 456–463, 2011 with due permission from the publisher.

  4. 4.

    The text/figures/equations/references etc. associated with [86] have been republished/reorganized from the paper [86], Amit Chaudhry and J.N. Roy, “Mathematical Modeling of MOS Capacitance in the presence of Depletion and Energy Quantization in Poly Silicon Gate”, Journal of Semiconductors, Vol.31, No.11, pp. 400-1–400-4, Nov,2010 with due permission from the publisher.

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Authors and Affiliations

  1. University Institute of Engineering and Technology Punjab University, Chandigarh, India

    Amit Chaudhry

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  1. Amit Chaudhry
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Chaudhry, A. (2013). Nanoscale Effects: Inversion Layer Quantization. In: Fundamentals of Nanoscaled Field Effect Transistors. Springer, New York, NY. https://doi.org/10.1007/978-1-4614-6822-6_3

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  • DOI: https://doi.org/10.1007/978-1-4614-6822-6_3

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  • Publisher Name: Springer, New York, NY

  • Print ISBN: 978-1-4614-6821-9

  • Online ISBN: 978-1-4614-6822-6

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