Humidity and Electromigration Tests

  • Preeti S. Chauhan
  • Anupam Choubey
  • ZhaoWei Zhong
  • Michael G. Pecht
Chapter

Abstract

This chapter discusses the effects of high humidity and high temperature, as well as high current densities, on the reliability of Cu wire bonds. Reliability data are provided from humidity reliability tests, pressure cooker tests, and highly accelerated stress tests on Cu wire-bonded parts. Comparisons are made between the humidity-related reliability of Cu and PdCu wire bonds. Electromigration tests to evaluate the reliability of wire bonds under high electrical current are also presented.

Keywords

Hydrolysis Mold Chlorine Auger Halogen 

References

  1. 99.
    Y. H. Tian, C. J. Hang, C. Q. Wang, G. Q. Ouyang, D. S. Yang, and J. P. Zhao, “Reliability and failure analysis of fine copper wire bonds encapsulated with commercial epoxy molding compound,” Microelectronics Reliability, vol. 51, pp. 157–165, Jan 2011.CrossRefGoogle Scholar
  2. 157.
    S. H. Kim, J. W. Park, S. J. Hong, and J. T. Moon, “The interface behavior of the Cu-Al bond system in high humidity conditions,” in Electronics Packaging Technology Conference (EPTC), 2010 12th, 2010, pp. 545–549.Google Scholar
  3. 184.
    C. L. Gan, E. Ng, B. Chan, F. Classe, T. Kwuanjai, and U. Hashim, “Wearout Reliability and Intermetallic Compound Diffusion Kinetics of Au and PdCu Wires Used in Nanoscale Device Packaging,” Journal of Nanomaterials, vol. 2013, 2013.Google Scholar
  4. 190.
    C. E. Tan, “Copper wire bonding process in leaded packages with zero loss in quality, capacity, scrap & machine efficiency,” in Electronics Packaging Technology Conference (EPTC), 2011 IEEE 13th, 2011, pp. 324–328.Google Scholar
  5. 191.
    H. Liu, Z. Zhao, Q. Chen, J. Zhou, M. Du, S. Kim, J. Chae, and M. Chung, “Reliability of copper wire bonding in humidity environment,” in Electronics Packaging Technology Conference (EPTC), 2011 IEEE 13th, 2011, pp. 53–58.Google Scholar
  6. 192.
    C. Gan, E. Ng, B. Chan, U. Hashim, and F. Classe, “Technical barriers and development of Cu wirebonding in nanoelectronics device packaging,” Journal of Nanomaterials, vol. 2012, p. 96, 2012.CrossRefGoogle Scholar
  7. 193.
    C. W. Tan, A. R. Daud, and M. A. Yarmo, “Corrosion study at Cu–Al interface in microelectronics packaging,” Applied Surface Science, vol. 191, pp. 67–73, 2002.CrossRefGoogle Scholar
  8. 194.
    T. Uno and T. Yamada, “Improving humidity bond reliability of copper bonding wires,” in Electronic Components and Technology Conference (ECTC), 2010 Proceedings 60th, 2010, pp. 1725–1732.Google Scholar
  9. 195.
    H. Abe, D. C. Kang, T. Yamamoto, T. Yagihashi, Y. Endo, H. Saito, T. Horie, H. Tamate, Y. Ejiri, and N. Watanabe, “Cu wire and Pd-Cu wire package reliability and molding compounds,” in Electronic Components and Technology Conference (ECTC), 2012 IEEE 62nd, 2012, pp. 1117–1123.Google Scholar
  10. 196.
    R. Lawson, “A review of the status of plastic encapsulated semiconductor component reliability,” British Telecom technology journal, vol. 2, pp. 95–111, 1984.Google Scholar
  11. 197.
    D. S. Peck, “Comprehensive model for humidity testing correlation,” in Reliability Physics Symposium, 1986. 24th Annual, 1986, pp. 44–50.Google Scholar
  12. 198.
    A. Teverovsky, “NASA Electronic Parts and Packaging Program (NEPP),” 2005.Google Scholar
  13. 199.
    J. R. Black, “Electromigration failure modes in aluminum metallization for semiconductor devices,” Proceedings of the IEEE, vol. 57, pp. 1587–1594, 1969.CrossRefGoogle Scholar
  14. 200.
    C. Breach, “The great debate: copper vs. gold ball bonding.”Google Scholar
  15. 201.
    H. T. Orchard and A. L. Greer, “Electromigration effects on intermetallic growth at wire-bond interfaces,” Journal of Electronic Materials, vol. 35, pp. 1961–1968, Nov 2006.CrossRefGoogle Scholar
  16. 202.
    E. Zin, N. Michael, S. H. Kang, K. H. Oh, U. Chul, J. S. Cho, J. T. Moon, and C. U. Kim, “Mechanism of electromigration in Au/Al wirebond and its effects,” in Electronic Components and Technology Conference, 2009. ECTC 2009. 59th, 2009, pp. 943–947.Google Scholar
  17. 203.
    S. Horowitz and I. Blech, “Electromigration in Al/Cu/Al films observed by transmission electron microscopy,” Materials Science and Engineering, vol. 10, pp. 169–174, 1972.CrossRefGoogle Scholar
  18. 204.
    N. Bertolino, J. Garay, U. Anselmi-Tamburini, and Z. Munir, “High-flux current effects in interfacial reactions in Au–Al multilayers,” Philosophical Magazine B, vol. 82, pp. 969–985, 2002.Google Scholar
  19. 205.
    C.-K. Hu, “Electromigration failure mechanisms in bamboo-grained Al (Cu) interconnections,” Thin Solid Films, vol. 260, pp. 124–134, 1995.CrossRefGoogle Scholar
  20. 206.
    J. Tao, N. W. Cheung, and C. Hu, “Electromigration characteristics of copper interconnects,” Electron Device Letters, IEEE, vol. 14, pp. 249–251, 1993.Google Scholar
  21. 207.
    L. Arnaud, G. Tartavel, T. Berger, D. Mariolle, Y. Gobil, and I. Touet, “Microstructure and electromigration in copper damascene lines,” Microelectronics Reliability, vol. 40, pp. 77–86, 2000.CrossRefGoogle Scholar

Copyright information

© Springer Science+Business Media New York 2014

Authors and Affiliations

  • Preeti S. Chauhan
    • 1
  • Anupam Choubey
    • 2
  • ZhaoWei Zhong
    • 3
  • Michael G. Pecht
    • 1
  1. 1.Center for Advanced Life Cycle Engineering (CALCE)University of MarylandCollege ParkUSA
  2. 2.Industry ConsultantMarlboroughUSA
  3. 3.School of Mechanical & Aerospace EngineeringNanyang Technological UniversitySingaporeSingapore

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