Abstract
This chapter explains the wire bonding metallurgies for Cu and PdCu wires. The most common variations are bare Cu wires, PdCu wires with Al bond pads, and Ni/Au bond pads. The interfacial metallurgies of bare Cu wire on Al-, Ni-, and Cu-based bond pads are examined. Comparisons are made between the interfacial intermetallics, Au–Al, Cu–Al, and Cu–Au, at the bond–pad interface. The growth rates and electrical, mechanical, and thermal properties of the intermetallics are presented. The bond–pad interfaces for Ni-based finishes, such as Au–AuNi, Au–AuPdNi, Cu–AuNi, and Cu–AlPdNi, are also assessed.
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References
T. K. Lee, C. D. Breach, and W. L. Chong, “Comparsion of Au/Al and Cu/Al in wirebonding assembly and reliability,” in Microsystems, Packaging, Assembly and Circuits Technology Conference (IMPACT), 2011 6th International, 2011, pp. 234–237.
L. Hung, Y. Lin, S. Chen, Y. Wang, and C. S. Hsiao, “The characterization of intermetallic growth in copper and gold ball bonded on thicker aluminum,” in Electronic Packaging Technology, 2006. ICEPT '06. 7th International Conference on, 2006, pp. 1–6.
F. W. Wulff, C. D. Breach, D. Stephan, Saraswati, and K. J. Dittmer, “Characterisation of intermetallic growth in copper and gold ball bonds on aluminium metallization,” in Electronics Packaging Technology Conference, 2004. EPTC 2004. Proceedings of 6th, 2004, pp. 348–353.
H. Clauberg, P. Backus, and B. Chylak, “Nickel-palladium bond pads for copper wire bonding,” Microelectronics Reliability, vol. 51, pp. 75–80, Jan 2011.
L. England and T. Jiang, “Reliability of Cu wire bonding to Al metallization,” in Electronic Components and Technology Conference, 2007. ECTC '07. Proceedings. 57th, 2007, pp. 1604–1613.
B. K. Appelt, L. Huang, Y. Lai, and S. Chen, “Three years of fine Cu wire bonding in high volume manufacturing,” in Electronic Packaging Technology and High Density Packaging (ICEPT-HDP), 2011 12th International Conference on, 2011, pp. 1–3.
T. Uno, “Bond reliability under humid environment for coated copper wire and bare copper wire,” Microelectronics Reliability, vol. 51, pp. 148–156, Jan 2011.
I. Qin, X. Hui, H. Clauberg, R. Cathcart, V. L. Acoff, B. Chylak, and H. Cuong, “Wire bonding of Cu and Pd coated Cu wire: bondability, reliability, and IMC formation,” in Electronic Components and Technology Conference (ECTC), 2011 IEEE 61st, 2011, pp. 1489–1495.
N. SeokHo, H. TaeKyeong, P. JungSoo, K. JinYoung, Y. HeeYeoul, and L. ChoonHeung, “Characterization of intermetallic compound (IMC) growth in Cu wire ball bonding on Al pad metallization,” in Electronic Components and Technology Conference (ECTC), 2011 IEEE 61st, 2011, pp. 1740–1745.
D. Stephan, F. W. Wulff, and E. Milke, “Reliability of palladium coated copper wire,” in Electronics Packaging Technology Conference (EPTC), 2010 12th, 2010, pp. 343–348.
Y. Tian, C. Wang, I. Lum, M. Mayer, J. P. Jung, and Y. Zhou, “Investigation of ultrasonic copper wire wedge bonding on Au/Ni plated Cu substrates at ambient temperature,” Journal of Materials Processing Technology, vol. 208, pp. 179–186, 2008.
H. Clauberg, P. Backus, and B. Chylak, “Nickel–palladium bond pads for copper wire bonding,” Microelectronics Reliability, vol. 51, pp. 75–80, 2011.
H. Clauberg, B. Chylak, N. Wong, J. Yeung, and E. Milke, “Wire bonding with Pd-coated copper wire,” in CPMT Symposium Japan, 2010 IEEE, 2010, pp. 1–4.
J. Li, L. Liu, L. Deng, B. Ma, F. Wang, and L. Han, “Interfacial microstructures and thermodynamics of thermosonic Cu-wire bonding,” Electron Device Letters, IEEE, vol. 32, pp. 1433–1435, 2011.
M. Sivakumar, V. Kripesh, L. Loon Aik, and M. Kumar, “Fine pitch copper wire bond process development for dual damascene Cu metallized chips,” in Electronics Packaging Technology Conference, 2002. 4th, 2002, pp. 350–355.
C. W. Leong, X. Zhang, V. Kripesh, C. S. Premachandran, S. C. Chong, Y. Y. Liu, J. Madhukumar, V. R. Srinivas, P. P. Thaw, M. J. Jong, J. H. Lau, S. Wang, C. K. Foo, M. L. Thew, E. P. P. Myo, and W. L. Teo, “Reliability results of 0.8 mil fine pitch copper wire bonding on immersion gold plated pad for copper low-k devices,” in Electronics Packaging Technology Conference, 2008. EPTC 2008. 10th, 2008, pp. 957–964.
B. Zhang, K. Qian, T. Wang, Y. Cong, M. Zhao, X. Fan, and J. Wang, “Behaviors of palladium in palladium coated copper wire bonding process,” in Electronic Packaging Technology & High Density Packaging, 2009. ICEPT-HDP '09. International Conference on, 2009, pp. 662–665.
H. Xu, C. Liu, V. V. Silberschmidt, S. S. Pramana, T. J. White, and Z. Chen, “A re-examination of the mechanism of thermosonic copper ball bonding on aluminium metallization pads,” Scripta Materialia, vol. 61, pp. 165–168, Jul 2009.
H. Xu, C. Liu, V. V. Silberschmidt, S. S. Pramana, T. J. White, Z. Chen, M. Sivakumar, and V. L. Acoff, “A micromechanism study of thermosonic gold wire bonding on aluminum pad,” Journal of Applied Physics, vol. 108, Dec 1 2010.
H.-J. Kim, J. Y. Lee, K.-W. Paik, K.-W. Koh, J. Won, S. Choe, J. Lee, J.-T. Moon, and Y.-J. Park, “Effects of Cu/Al intermetallic compound (IMC) on copper wire and aluminum pad bondability,” Components and Packaging Technologies, IEEE Transactions on, vol. 26, pp. 367–374, 2003.
H. Xu, C. Liu, V. Silberschmidt, and Z. Chen, “Growth of intermetallic compounds in thermosonic copper wire bonding on aluminum metallization,” Journal of Electronic Materials, vol. 39, pp. 124–131, 2010.
H. Xu, C. Liu, V. V. Silberschmidt, Z. Chen, and V. L. Acoff, “Effect of ultrasonic energy on nanoscale interfacial structure in copper wire bonding on aluminium pads,” Journal of Physics D-Applied Physics, vol. 44, Apr 13, 2011.
H. Xu, C. Liu, V. V. Silberschmidt, S. S. Pramana, T. J. White, Z. Chen, and V. L. Acoff, “Behavior of aluminum oxide, intermetallics and voids in Cu–Al wire bonds,” Acta Materialia, vol. 59, pp. 5661–5673, 2011.
J. Premkumar, B. S. Kumar, M. Madhu, M. Sivakumar, K. Y. J. Song, and Y. M. Wong, “Key factors in Cu wire bonding reliability: remnant aluminum and Cu/Al IMC thickness,” in Electronics Packaging Technology Conference, 2008. EPTC 2008. 10th, 2008, pp. 971–975.
R. Pelzer, M. Nelhiebel, R. Zink, S. Wöhlert, A. Lassnig, and G. Khatibi, “High temperature storage reliability investigation of the Al–Cu wire bond interface,” Microelectronics Reliability.
H. Xu, V. L. Acuff, C. Liu, V. V. Silberschmidt, and Z. Chen, “Facilitating intermetallic formation in wire bonding by applying a pre-ultrasonic energy,” Microelectronic Engineering, vol. 88, pp. 3155–3157, Oct 2011.
H. Xu, C. Liu, V. V. Silberschmidt, Z. Chen, J. Wei, and M. Sivakumar, “Effect of bonding duration and substrate temperature in copper ball bonding on aluminium pads: a TEM study of interfacial evolution,” Microelectronics Reliability, vol. 51, pp. 113–118, Jan 2011.
Y. H. Tian, I. Lum, S. J. Won, S. H. Park, J. P. Jung, M. Mayer, and Y. Zhou, “Experimental study of ultrasonic wedge bonding with copper wire,” in Electronic Packaging Technology, 2005 6th International Conference on, 2005, pp. 389–393.
Y.-h. Tian, C.-q. Wang, and Y. N. Zhou, “Bonding mechanism of ultrasonic wedge bonding of copper wire on Au/Ni/Cu substrate,” Transactions of Nonferrous Metals Society of China, vol. 18, pp. 132–137, 2008.
S. Thomas and D. Reynoso, “Reliability of Cu wire bonding on active area for automotive applications,” in Electronics Packaging Technology Conference, 2009. EPTC '09. 11th, 2009, pp. 363–368.
D. Degryse, B. Vandevelde, and E. Beyne, “FEM study of deformation and stresses in copper wire bonds on Cu low-k structures during processing,” in Electronic Components and Technology Conference, 2004. Proceedings. 54th, 2004, pp. 906–912 Vol.1.
C. Jian, D. Degryse, P. Ratchev, and I. De Wolf, “Mechanical issues of Cu-to-Cu wire bonding,” Components and Packaging Technologies, IEEE Transactions on, vol. 27, pp. 539–545, 2004.
C.-L. Yeh, Y.-S. Lai, and J.-D. Wu, “Dynamic analysis of wirebonding process on Cu/low-k wafers,” in Electronics Packaging Technology, 2003 5th Conference (EPTC 2003), 2003, pp. 282-286.
X. Gu, J. Antol, Y. F. Yao, and K. H. Chua, “A reliable wire bonding on 130 nm Cu/low-k device,” in Electronics Packaging Technology, 2003 5th Conference (EPTC 2003), 2003, pp. 707–711.
C.-L. Chuang, J.-N. Aoh, and R.-F. Din, “Oxidation of copper pads and its influence on the quality of Au/Cu bonds during thermosonic wire bonding process,” Microelectronics Reliability, vol. 46, pp. 449–458, 2006.
J.-N. Aoh and C.-L. Chuang, “Development of a thermosonic wire-bonding process for gold wire bonding to copper pads using argon shielding,” Journal of Electronic Materials, vol. 33, pp. 300–311, 2004.
Y. S. Zheng, Y. J. Su, B. Yu, and P. D. Foo, “Investigation of defect on copper bond pad surface in copper/low k process integration,” Microelectronics Reliability, vol. 43, pp. 1311–1316, 2003.
M. Sivakumar, V. Kripesh, C. Ser Choong, C. Tai Chong, and L. Aik Lim, “Reliability of wire bonding on low-k dielectric material in damascene copper integrated circuits PBGA assembly,” Microelectronics Reliability, vol. 42, pp. 1535–1540, 2002.
C. N. B. Poh, V. Tee Heng, L. Tham Veng, and E. N. C. Chye, “Process development of 17.5 μm gold wire bonding on C65 low-k devices with probe marks,” in Electronics Packaging Technology Conference (EPTC), 2010 12th, 2010, pp. 359–363.
S. Chungpaiboonpatana and F. G. Shi, “Packaging of copper/low-k IC devices: a novel direct fine pitch gold wirebond ball interconnects onto copper/low-k terminal pads,” Advanced Packaging, IEEE Transactions on, vol. 27, pp. 476–489, 2004.
M.-c. Han, B.-y. Yan, J. Z. Yao, T. A. Tran, S. Lee, and J. Li, “Low-k CMOS65 ball grid array 47 um pitch wire bonding process development,” in Electronics Packaging Technology Conference, 2007. EPTC 2007. 9th, 2007, pp. 613–617.
V. Kripesh, M. Sivakumar, L. Loon Aik, R. Kumar, and M. K. Iyer, “Wire bonding process impact on low-k dielectric material in damascene copper integrated circuits,” in Electronic Components and Technology Conference, 2002. Proceedings. 52nd, 2002, pp. 873–880.
P.-C. Chin, C.-Y. Hu, H.-C. Hsu, S.-L. Fu, C.-L. Yeh, and Y.-S. Lai, “Characteristic of heat affected zone in thin gold wire and dynamic transient analysis of wire bonding for microstructure of Cu/Low-k wafer,” in Microsystems, Packaging, Assembly and Circuits Technology, 2007. IMPACT 2007. International, 2007, pp. 297–300.
X. Fan, K. Qian, T. Wang, Y. Cong, M. Zhao, B. Zhang, and J. Wang, “Nanoindentation investigation of copper bonding wire and ball,” in Electronic Packaging Technology & High Density Packaging, 2009. ICEPT-HDP '09. International Conference on, 2009, pp. 790–794.
S. Murali, N. Srikanth, and C. J. Vath III, “An analysis of intermetallics formation of gold and copper ball bonding on thermal aging,” Materials Research Bulletin, vol. 38, pp. 637–646, 2003.
M. H. M. Kouters, G. H. M. Gubbels, and C. A. Yuan, “Characterization of intermetallic compounds in Cu-Al ball bonds: mechanical properties, delamination strength and thermal conductivity,” in Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE), 2012 13th International Conference on, 2012, pp. 1/9–9/9.
P. Ratchev, S. Stoukatch, and B. Swinnen, “Mechanical reliability of Au and Cu wire bonds to Al, Ni/Au and Ni/Pd/Au capped Cu bond pads,” Microelectronics Reliability, vol. 46, pp. 1315–1325, 2006.
H. Xu, C. Liu, and V. Silberschmidt, “Effect of thermal aging on interfacial behaviour of copper ball bonds,” in Electronics System-Integration Technology Conference, 2008. ESTC 2008. 2nd, 2008, pp. 891–896.
S. Lee, T. Uehling, and H. L. III., “Freescale copper wire - analysis, results and implementation,” 2012.
S. H. Kim, J. W. Park, S. J. Hong, and J. T. Moon, “The interface behavior of the Cu-Al bond system in high humidity conditions,” in Electronics Packaging Technology Conference (EPTC), 2010 12th, 2010, pp. 545–549.
H. Xu, C. Liu, V. V. Silberschmidt, S. S. Pramana, T. J. White, Z. Chen, and V. L. Acoff, “New mechanisms of void growth in Au–Al wire bonds: volumetric shrinkage and intermetallic oxidation,” Scripta Materialia, vol. 65, pp. 642–645, 2011.
Y. Y. Tan and F. K. Yong, “Cu-Al IMC micro structure study in Cu wire bonding with TEM,” in Physical and Failure Analysis of Integrated Circuits (IPFA), 2010 17th IEEE International Symposium on the, 2010, pp. 1–4.
H. Xu, C. Liu, V. V. Silberschmidt, S. S. Pramana, T. J. White, Z. Chen, and V. L. Acoff, “Intermetallic phase transformations in Au–Al wire bonds,” Intermetallics, vol. 19, pp. 1808–1816, 2011.
L. S. Yeoh, “Characterization of intermetallic growth for gold bonding and copper bonding on aluminum metallization in power transistors,” in Electronics Packaging Technology Conference, 2007. EPTC 2007. 9th, 2007, pp. 731–736.
Y. Funamizu and K. Watanabe, “Interdiffusion in the Al-Cu system,” Transactions of the Japan Institute of Metals, vol. 12, pp. 147–152, 1971.
P. M. Hall and J. M. Morabito, “Diffusion problems in microelectronic packaging,” Thin Solid Films, vol. 53, pp. 175–182, 1978.
M. Pinnel and J. Bennett, “On the formation of the ordered phases CuAu and Cu3Au at a copper/gold planar interface,” Metallurgical and Materials Transactions A, vol. 10, pp. 741–747, 1979.
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Chauhan, P.S., Choubey, A., Zhong, Z., Pecht, M.G. (2014). Bonding Metallurgies. In: Copper Wire Bonding. Springer, New York, NY. https://doi.org/10.1007/978-1-4614-5761-9_3
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DOI: https://doi.org/10.1007/978-1-4614-5761-9_3
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