Skip to main content

Abstract

Transistor biasing can be used to increase the mismatch between the transistors of PUF cells artificially. This technique is described in this chapter. In the first part the performance of the approach is analyzed analytically. Thus, the error rate after biasing can be estimated. Biasing can be realized utilizing NBTI or HCI which are transistor aging effects. Both approaches, NBTI and HCI utilizing is explained.

This is a preview of subscription content, log in via an institution to check access.

Access this chapter

Chapter
USD 29.95
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
eBook
USD 84.99
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
Softcover Book
USD 109.99
Price excludes VAT (USA)
  • Compact, lightweight edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info
Hardcover Book
USD 109.99
Price excludes VAT (USA)
  • Durable hardcover edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info

Tax calculation will be finalised at checkout

Purchases are for personal use only

Institutional subscriptions

Author information

Authors and Affiliations

Authors

Rights and permissions

Reprints and permissions

Copyright information

© 2013 Springer Science+Business Media New York

About this chapter

Cite this chapter

Böhm, C., Hofer, M. (2013). PUF Biasing. In: Physical Unclonable Functions in Theory and Practice. Springer, New York, NY. https://doi.org/10.1007/978-1-4614-5040-5_11

Download citation

  • DOI: https://doi.org/10.1007/978-1-4614-5040-5_11

  • Published:

  • Publisher Name: Springer, New York, NY

  • Print ISBN: 978-1-4614-5039-9

  • Online ISBN: 978-1-4614-5040-5

  • eBook Packages: EngineeringEngineering (R0)

Publish with us

Policies and ethics