Characterizing External Resistive, Inductive and Capacitive Loads for Micro-Switches

  • Benjamin Toler
  • Ronald CoutuJr.Email author
Conference paper
Part of the Conference Proceedings of the Society for Experimental Mechanics Series book series (CPSEMS)


Microelectromechanical systems (MEMS) switches offer much lower power consumption, much better isolation, and lower insertion loss compared to conventional field-effect transistors and PIN diodes however, the MEMS switch reliability is a major obstacle for large-volume commercial applications [1]. To enhance reliability, circuit designers need simple and accurate behavioral models of embedded switches in CAD tools to enable system-level simulations [2]. Where Macro-switch researchers assess electric contact performance based on the type of load that is being switched, in MEMS literature, micro-switch performance and reliability is characterized by testing the devices under “hot-switched” or “cold-switched” load conditions; simple models are developed from the “hot” and “cold” characterizations. By applying macro-switch performance characterization techniques, i.e. examining reliability based on the type of load that is being switched, clear characterizations of “hot” switching and “cold” switching external resistive, capacitive, and inductive loads are produced. External resistive loads were found to act as current limiters and should be suitable under certain criteria for reducing current density through the contact area and thus limiting device failure to mechanical failure modes. Alternatively, external capacitive loads increased current density under “hot” switching conditions at the moment the micro-switch closes; which increases the risk for material transfer and device failure. Under DC conditions, the inductive loads had little effect in either “hot” or “cold” switching environments.


Micro-switch reliability Capacitive loads Resistive loads Inductive loads Contact resistance 



The authors would like to thank Lt Col L. Starman for his support and assistance with theory and analysis. The authors would also like to extend gratitude to AFIT technicians, Mr. Rich Johnston and Mr. Tom Stephenson for their work.

Disclaimer The views expressed in this article are those of the authors and do not reflect the official policy or position of the United States Air Force, Department of Defense, or the U. S. Government.


  1. 1.
    Yang Z, Lichtenwalner D, Morris A, Krim J, Kingon A (2009) Comparison of Au and Au-Ni alloys as contact materials for MEMS switches. IEEE J Microelectromech Syst 18(2):287–295CrossRefGoogle Scholar
  2. 2.
    Kaynak M, Ehwald K, Sholz R, Korndorfer F, Wipf C, Sun Y, Tillack B, Zihir S, Gurbuz Y (2010) Characterization of an embedded RF-MEMS switch. In: 2010 topical meeting on silicon monolithic integrated circuits in RF systems (SiRF), New Orleans, LAGoogle Scholar
  3. 3.
    Rebeiz G (2004) RF MEMS, theory, design, and technology. Wiley, HobokenGoogle Scholar
  4. 4.
    Yang Z, Lichtenwalner D, Morris A, Krim J, Kingon A (2010) Contact degradation in hot/cold operation of direct contact micro-switches. J Micromech Microeng 20:1–8Google Scholar
  5. 5.
    Pitney K (1973) Ney contact manual. The J. M. Ney Company, BloomfieldGoogle Scholar
  6. 6.
    Holm R (1967) Electric contacts: theory and applications, 4th edn. Springer, BerlinGoogle Scholar
  7. 7.
    Braunovic M, Konchits V, Myshkin N (2007) Electrical contacts – fundamentals, applications, and technology. CRC Press, New YorkGoogle Scholar
  8. 8.
    Firestone F, Abbot E (1933) Specifying surface quantity – a method based on the accurate measurement and comparison. ASME Mech Eng 55:569Google Scholar
  9. 9.
    Coutu R, Reid J, Cortez R, Strawser R, Kladitis P (2006) Microswitches with sputtered Au, AuPd, Au-on-AuPt, and AuPtCu alloy electrical contacts. IEEE Trans Components Packag Technol 29(2):341–349CrossRefGoogle Scholar
  10. 10.
    Kim J, Lee S, Baek C, Kwon Y, Kim Y (2008) Cold and hot switching lifetime characterizations of ohmic contact RF MEMS switches. IEICE Electron Expr 5(11):418–423CrossRefGoogle Scholar
  11. 11.
    Zavracky P, Majumber S, McGruer N (1997) Micromechanical switches fabricated using nickel surface micromachining. J Microelectromech Syst 6(1):3–9CrossRefGoogle Scholar
  12. 12.
    Majumder S, Lampen J, Morrison R, Maciel J (2003) MEMS switches. IEEE Instrum Meas Mag 6(1):12–15CrossRefGoogle Scholar
  13. 13.
    Coutu R, Kladitis P, Starman L, Reid J (2004) A comparison of micro-switch analytic, finite element, and experimental results. Sens Acuat A Phys 115(2–3):22–258Google Scholar

Copyright information

© The Society for Experimental Mechanics 2013

Authors and Affiliations

  1. 1.Air Force Institute of TechnologyWPAFBUSA

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