Abstract
The need of reliable nanometric integrated circuits is driving the EDA community to develop new automated design techniques in which power consumption and variability are central objectives of the optimization flow.
Although several Design-for-Low-Power and Design-for-Variability options are already available in modern EDA suites, the contrasting nature of the two metrics makes their integration extremely challenging. Most of the approaches used to compensate and/or mitigate circuit variability (e.g., Dynamic Voltage Scaling and Adaptive Body Biasing) are, in fact, intrinsically power inefficient, as they exploit the concept of redundancy, which is known to originate power overhead.
In this work, we introduce possible solutions for concurrent leakage minimization and variability compensation. More specifically, we propose Power-Gating as a mean for simultaneously controlling static power consumption and mitigating the effects induced by two of the most insidious sources of variability, namely, Process Variations (PV) due to uncertainties in the manufacturing and Transistor Aging due to Negative Bias Temperature Instability (NBTI).
We show that power-gating, when implemented through the insertion of dedicated switches (called sleep transistors), has a double effect: On one hand, when sleep transistors are enhanced with tunable features, it acts as a natural supply-voltage regulator, which implements a control knob for PV compensation; on the other hand, during the idle periods, it makes the circuits immune to NBTI-induced aging.
We describe optimization techniques for the integration of a new concept of power-gating into modern sub-45 nm design flows, that is, Variation-Aware Power-Gating. The experimental results we have obtained are extremely promising, since they show 100 % timing yield under the presence of PV and circuit lifetime extension of more than 5× in the presence of NBTI.
This is a preview of subscription content, log in via an institution.
Buying options
Tax calculation will be finalised at checkout
Purchases are for personal use only
Learn about institutional subscriptionsReferences
M. Alam (2008) “Reliability- and process-variation aware design of integrated circuits,” in Microelectronics Reliability, 48(8):1114–1122.
M. Anis, S. Areibi, M. Elmasry (2003) “Design and optimization of multi-threshold CMOS (MTCMOS) circuits,” IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 22(10):1324–1342.
P. Babighian, L. Benini, A. Macii, E. Macii (2006) “Enabling fine-grain leakage management by voltage anchor insertion,” IEEE Design, Automation and Test in Europe (DATE’06), pp. 868–873.
D. Boning, S. Nassif (2000) “Models of process variations in device and interconnect,” in Design of High Performance Microprocessor Circuits, Wiley.
S. Borkar (2005) “Designing reliable systems from unreliable components: The challenges of transistor variability and degradation,” IEEE Micro, 25(6):10–16.
S. Borkar, T. Karnik, S. Narendra, J. Tschanz, A. Keshavarzi, V. De (2003) “Parameter variations and impact on circuits and microarchitecture,” ACM/IEEE Design Automation Conference (DAC’03), pp. 338–342.
A. Calimera, A. Pullini, A. Sathanur, L. Benini, A. Macii, E. Macii, M. Poncino (2007) “Design of a family of sleep transistor cells for a clustered power-gating flow in 65nm technology,” ACM/IEEE Great Lakes Symposium on VLSI (GLSVLSI’07), pp.501–504.
A. Calimera, L. Benini, A. Macii, E. Macii, M. Poncino (2009) “Design of a flexible reactivation cell for safe power-mode transition in power-gated circuits,” IEEE Transaction on Circuits and Systems - Part I, Regular Papers, 56(9):1979–1993.
A. Calimera, E. Macii, M. Poncino (2009) “NBTI-aware power gating for concurrent leakage and aging optimization,” International Symposium on Low Power Electronics and Design (ISLPED’09), pp. 127–132.
A. Calimera, E. Macii, M. Poncino (2010) “NBTI-aware clustered power gating,” ACM Transactions on Design Automation of Electronic Systems, 16(1):3.1–3.25.
L. Changbo, L. He (2004) “Distributed sleep transistor network for power reduction,” IEEE Transactions on Very Large Scale Integration (VLSI) Systems, 12(9):937–946.
Z. Chen, K. Hess, J. Lee, J. Lyding, E. Rosenbaum, I. Kizilyalli, S. Chetlur, R. Huang (2000) “On the mechanism for interface trap generation in mos transistors due to channel hot carrier stressing,” IEEE Electron Device Letters, 21(1):24–26.
C. Chiang, J. Kawa (2007) Design for manufacturability and yield for nano-Scale CMOS, Springer-Verlag.
H.-S. Deogun, D. Sylvester, R. Rao, K. Nowka (2005) “Adaptive MTCMOS for dynamic leakage and frequency control using variable footer strength,” IEEE International SOC Conference (SoCC’05), pp. 147–150.
D. Flynn, R. Aitken, A. Gibbons, K. Shi (2007) Low Power Methodology Manual, Springer-Verlag.
S. Henzler, G. Georgakos, M. Eireiner, T. Nirschl, C. Pacha, J. Berthold, D. Schmitt-Landsiedel (2006) “Dynamic state-retention flip-flop for fine-grained power gating with small design and power overhead,” IEEE Journal of Solid-State Circuits, 41(7):1654–1661.
ITRS (2009) “Process integration, devices & structures,” in International Technology Roadmap for Semiconductors, ITRS.
T. Jhaveri, V. Rovner, L. Liebmann, L. Pileggi, A. Strojwas, J. Hibbeler (2010) “Co-optimization of circuits, layout and lithography for predictive technology scaling beyond gratings,” IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 29(4):509–527.
W. Kai-Chiang, D. Marculescu (2009) “Joint logic restructuring and pin reordering against NBTI-induced performance degradation,” IEEE Design, Automation and Test in Europe (DATE’09), pp. 75–80.
J. Kao, S. Narendra, A. Chandrakasan (1998) “MTCMOS hierarchical sizing based on mutual exclusive discharge patterns,” ACM/IEEE Design Automation Conference (DAC’98), pp. 495–500.
V. Khandelwal, S. Srivastava (2007) “Leakage control through fine-grained placement and sizing of sleep transistors,” IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 26(7):1246–1255.
S. Kumar, C. Kim, S. Sapatnekar (2006) “An analytical model for negative bias temperature instability,” IEEE/ACM International Conference on Computer-Aided Design (ICCAD’06), pp. 493–496.
S. Kumar, C. Kim, S. Sapatnekar (2007) “NBTI-aware synthesis of digital circuits,” ACM/IEEE Design Automation Conference (DAC’07), pp. 370–375.
S. Kumar, C. Kim, S. Sapatnekar (2009) “Adaptive techniques for overcoming performance degradation due to aging in digital circuits,” IEEE Asia and South Pacific Design Automation Conference (ASPDAC’09), pp. 284–289.
M. Lavin, F. L. Heng, G. Northrop (2004) “Backend CAD flows for restrictive design rules,” IEEE/ACM International Conference on Computer-Aided Design (ICCAD’04), pp. 739–746.
S. Mahapatra, D. Saha, D. Varghese, P. Kumar (2006) “On the generation and recovery of interface traps in mosfets subjected to NBTI, FN, and HCI stress,” IEEE Transactions on Electron Devices, 53(7):1583–1592.
E. Pakbaznia, F. Fallah, M. Pedram (2008) “Charge recycling in power-gated CMOS circuits,” IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 27(10):1798–1811.
K. Roy, S. Mukhopadhyay, H. Mahmoodi-Meimand (2003) “Leakage current mechanisms and leakage reduction techniques in deep-submicrometer CMOS circuits,” Proceedings of the IEEE, 91(2):305–327.
A. Sathanur, A. Pullini, L. Benini, A. Macii, E. Macii, M. Poncino (2008) “Optimal sleep transistor synthesis under timing and area constraints,” ACM/IEEE Great Lakes symposium on VLSI (GLSVLSI’08), pp. 177–182.
A. Sathanur, L. Benini, A. Macii, E. Macii, M. Poncino (2011) “Fast computation of discharge current upper bounds for clustered power-gating,” IEEE Transactions on Very Large Scale Integration (VLSI) Systems, 19(1):146–151.
A. Sathanur, L. Benini, A. Macii, E. Macii, M. Poncino (2011) “Row-based power-gating: A novel sleep transistor insertion methodology for leakage power optimization in nanometer CMOS circuits,” IEEE Transactions on Very Large Scale Integration (VLSI) Systems, 19(3):469–482.
L. D. Silva, A. Calimera, A. Macii, E. Macii, M. Poncino (2011) “Power efficient variability compensation through clustered tunable power-gating,” IEEE Journal of Emerging and Selected Topics in Circuits and Systems, 1(3):242–253.
D. Sylvester, K. Agarwal, S. Shah (2008) “Variability in nanometer CMOS: Impact, analysis, and minimization,” Integration - The VLSI Journal, 41(3):319–339.
J. Tschanz, J. Kao, S. Narendra, R. Nair, D. Antoniadis, A. Chandrakasan, V. De (2002) “Adaptive body bias for reducing impacts of die-to-die and within-die parameter variations on microprocessor frequency and leakage,” IEEE Journal of Solid-State Circuits, 37(11):1396–1402.
J. Tschanz, S. Narendra, R. Nair, V. De (2003) “Effectiveness of adaptive supply voltage and body bias for reducing impact of parameter variations in low power and high performance microprocessors,” IEEE Journal of Solid-State Circuits, 38(5):826–829.
Author information
Authors and Affiliations
Corresponding author
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 2015 Springer Science+Business Media New York
About this chapter
Cite this chapter
Calimera, A., Macii, A., Macii, E., Poncino, M. (2015). Power-Gating for Leakage Control and Beyond. In: Reis, R., Cao, Y., Wirth, G. (eds) Circuit Design for Reliability. Springer, New York, NY. https://doi.org/10.1007/978-1-4614-4078-9_9
Download citation
DOI: https://doi.org/10.1007/978-1-4614-4078-9_9
Published:
Publisher Name: Springer, New York, NY
Print ISBN: 978-1-4614-4077-2
Online ISBN: 978-1-4614-4078-9
eBook Packages: EngineeringEngineering (R0)