Abstract
The aging process due to Bias Temperature Instability (BTI) is a key limiting factor of circuit lifetime in contemporary CMOS design. Threshold voltage shift induced by BTI is a strong function of stress voltage and temperature. Furthermore, BTI consists of both stress and recovery phases, depending on the dynamic stress conditions. This behavior poses a unique challenge for long-term aging prediction for a wide range of stress patterns encountered in today’s circuits. Traditional approaches usually resort to an average, constant stress waveform to simplify the lifetime prediction. They are efficient, but fail to capture the reality of circuit operation, especially under Dynamic Voltage Scaling (DVS) or in analog/mixed signal designs where the stress waveform is much more random. In this chapter, we present a suite of modeling solutions that enable aging simulation under all dynamic stress conditions. The key innovation of this chapter is to develop compact models of BTI when the stress voltage is varying. The results cover the underlying physics of two leading mechanisms, Reaction–Diffusion (R–D) and Trapping/Detrapping (T–D). Moreover, silicon validation of these models is performed at 45 and 65 nm technology nodes, at both device and circuit levels. Leveraging the newly developed BTI models under DVS and random input waveforms, efficient aging simulation is demonstrated in representative digital and analog circuits. Our proposed work provides a general and comprehensive solution to circuit aging analysis under random stress patterns.
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References
C. Constantinescu, “Trends and challenges in vlsi circuit reliability,” IEEE Computer Society, pp. 14–19, 2003.
Semiconductor Industry Associate, International Technology Roadmap for Semiconductors, 2010. (Available at http://public.itrs.net).
D. K. Schroder and J. A. Babcock, “Negative bias temperature instability: Road to cross in deep submicron silicon semiconductor manufacturing,” Journal of Applied Physics, vol. 94, no. 1, pp. 1-18, 2003.
K. O. Jeppson and C. M. Svensson, “Negative bias stress of MOS devices at high electric fields and degradation of MNOS devices,” J. Applied Physics, vol. 48, no. 5, pp. 2004-2014, 1977.
K. Bernstein, D. J. Frank, A. E. Gattiker, W. Haensch, B. L. Ji, S. R. Nassif, E. J. Nowak, D. J. Pearson, N. J. Rohrer, “High-performance CMOS variability in the 65-nm regime and beyond,” IBM Journal of Research and Development, vol. 50, no. 4/5, pp. 433-449, July 2006.
S. Borkar, T. Karnik, S. Narendra, J. Tschanz, A. Keshavarzi, V. De, “Parameter variations and impact on circuits and microarchitecture,” Design Automation Conference, pp. 338-342, 2003.
F. Arnaud, L. Pinzelli, C. Gallon, M. Rafik, P. Mora, F. Boeuf, “Challenges and opportunity in performance, variability and reliability in sub-45 nm CMOS technologies,” Microelectronics Reliability, vol. 51, no. 9-11, pp. 1508-1514, Sept.-Nov. 2011.
B. H. Calhoun, Y. Cao, X. Li, K. Mai, L. T. Pileggi, R. A. Rutenbar, and K. L. Shepard, “Digital circuit design challenges and opportunities in the era of nanoscale CMOS,” Proceedings of the IEEE, vol. 96, no. 2, pp. 343-365, Feb. 2008.
A. Ramadan, “Compact model council’s standard circuit simulator interface for reliability modeling,” International Reliability Physics Symposium, pp. 2A.5.1-2A.5.6, 2013.
J. Hicks, D. Bergstrom, M. Hattendorf, J. Jopling, J. Maiz, S. Pae, et al., “45 nm transistor reliability,” Intel Technology Journal, vol. 12, no. 02, pp. 131-144, Jun. 2008.
S. V. Kumar, C. H. Kim and S. S. Sapatnekar, “Adaptive techniques for overcoming performance degradation due to aging in digital circuits,” Asia and South Pacific Design Automation Conference, pp. 284-289, 2009.
V. Reddy, “Impact of negative bias temperature instability in digital circuit reliability,” International Reliability and Physics Symposium, pp. 248-253, 2002.
R. Zheng, et al., “Circuit aging prediction for low-power operation,” Customs Integrated Circuits Conference, pp. 427-430, 2009
G. Chen, K. Y. Chuah, M. F. Li, Daniel SH Chan, C. H. Ang, J. Z. Zheng, Y. Jin, and D. L. Kwong, “Dynamic NBTI of PMOS transistors and its impact on device lifetime,” International Reliability Physics Symposium, pp. 196-202, 2003.
B. C. Paul, K. Kang, H. Kufluoglu, M. A. Alam, and K. Roy, “Impact of NBTI on the temporal performance degradation of digital circuits,” IEEE Electronic Device Letters, vol. 26, no. 8, pp. 560-562, Aug. 2005.
R. Vattikonda, W. Wang, and Y. Cao, “Modeling and minimization of pmos nbti effect for robust nanometer design,” IEEE/ACM Design Automation Conference, pp. 1047-1052, Jul. 2006.
M. Agarwal, B. C. Paul, Ming Zhang, and S. Mitra, “Circuit failure prediction and its application to transistor aging,” VLSI Test Symposium, pp. 277-286, 2007.
V. Reddy, A. T. Krishnan, A. Marshall, J. Rodriguez, S. Natarajan, T. Rost, and S. Krishnan, “Impact of negative bias temperature instability on digital circuit reliability ,” International Reliability Physics Symposium, pp. 248-254, 2002.
W. Wang, Z. Wei, S. Yang and Y. Cao, “An efficient method to identify critical gates under circuit aging,” Int. Conference on Computer Aided Design, pp. 735-740, 2007.
A. T. Krishnan, F. Cano, C. Chancellor, V. Reddy, Q. Zhangfen, P. Jain, J. Carulli, J. Masin, S. Zuhoski, S. Krishnan, and J. Ondrusek, “Product drift from NBTI: Guardbanding, circuit and statistical effects,” Int. Electron Devices Meeting, pp. 4.3.1-4.3.4, 2010.
W. Wang, S. Yang, S. Bhardwaj, R. Vattikonda, S. Vrudhula, F. Liu, Y. Cao, “The impact of NBTI effect on combinational circuit: Modeling, simulation, and analysis,” IEEE Transactions on VLSI Systems, vol. 18, no. 2, pp. 173-183, 2010.
H. Sangwoo, K. Juho, “NBTI-aware statistical timing analysis framework,” IEEE International SOC Conference, pp.158-163, 2010.
E. Maricau and G. Gielen, “Computer-aided analog circuit design for reliability in nanometer CMOS,” IEEE Transactions on Emerging and Selected Topics in Circuits and Systems, vol. 1, no. 1, pp. 50-58, Mar. 2011.
A. R. Brown, V. Huard and A. Asenov, “Statistical simulation of progressive NBTI degradation in a 45-nm technology pMOSFET,” IEEE Transactions on Electron Devices, vol. 57, no. 9, pp. 2320-2323, Sept. 2010.
S. Ogawa and N. Shiono, “Generalized diffusion-reaction model for the low-field charge-buildup instability at the Si-SiO2 interface,” Physical Review B, vol. 51, no. 7, pp. 4218-4230, Feb. 1995.
G. Chen, K. Y. Chuah, M. F. Li, D. S. H. Chan, C. H. Ang, J. Z. Zheng, Y. Jin, et al., “Dynamic NBTI of PMOS transistors and its impact on device lifetime,” International Reliability Physics Symposium, pp. 196-202, 2003.
S. Chakravarthi, A. T. Krishnan, V. Reddy, C. F. Machala and S. Krishnan, “A comprehensive framework for predictive modeling of negative bias temperature instability,” International Reliability Physics Symposium, pp. 273-282, 2004.
M. A. Alam, S. Mahapatra, “A comprehensive model of PMOS NBTI degradation,” Microelectronics Reliability, vol. 45, pp. 71-81, 2005.
V. Huard, C. R. Parthasarathy, C. Guerin, M. Denais, “Physical modeling of negative bias temperature instabilities for predictive extrapolation,” International Reliability Physics Symposium, pp. 733-734, 2006.
S. V. Kumar, C. H. Kim, and S. S. Sapatnekar, “An analytical model for Negative Bias Temperature Instability (NBTI),” International Conference for Computer Aided Design, pp. 493-496, 2006.
W. Wang, V. Reddy, A. Krishnan, R. Vattikonda, S. Krishnan and Y. Cao, “Compact modeling and simulation of circuit reliability for 65 nm CMOS technology,” IEEE Transactions on Device and Materials Reliability, vol. 7, no. 4, pp. 509-517, Dec. 2007.
R. Tu, E. Rosenbaum, W. Chan, C. Li, E. Minami, K. Quader, et al., “Berkeley reliability tools – BERT,” IEEE Transactions on Computer-Aided Design of Integrate Circuits and Systems, vol. 12, no. 10, pp. 1524-1534, Oct. 1993.
Reliability Simulation in Integrated Circuit Design, Cadence, 2003.
MOS Device Aging Analysis with HSPICE and CustomSim, Synopsys, 2011.
ELDO User’s Manual, Mentor Graphics, 2005.
V. Huard, M. Denais, “Hole trapping effect on methodology for DC and AC negative bias temperature instability measurements in pMOS transistors,” International Reliability Physics Symposium, pp. 40-45, 2004.
T. Grasser, B. Kaczer, W. Goes, H. Reisinger, T. Aichinger, P. Hehenberger, et al., “The paradigm shift in understanding the bias temperature instability: from reaction-diffusion to switching oxide traps,” IEEE Transactions on Electron Devices, vol. 58, no. 11, pp. 3652-3666, Nov. 2011.
G. I. Wirth, R. da Silva and B. Kaczer, “Statistical model for MOSFET bias temperature instability component due to charge trapping,” IEEE Transactions on Electron Devices, vol. 58, no. 8, pp. 2743-2751, Aug. 2011.
J. B. Velamala, K. B. Sutaria, T. Sato, Y. Cao, “Aging statistics based on trapping/detrapping: silicon evidence, modeling and long-term prediction,” International Reliability Physics Symposium, pp. 2 F.2.1-2 F.2.5, 2012.
T. Grasser, H. Reisinger, W. Goes, T. Aichinger, P. Hehenberger, P.-J. Wagner, M. Nelhiebel, J. Franco, B. Kaczer, “Switching oxide traps as the missing link between negative bias temperature instability and random telegraph noise,” International Electron Devices Meeting, pp.1-4, 2009.
G. I. Wirth, J. Koh, R. da Silva, R. Thewes, and Ralf Brederlow, “Modeling of statistical low-frequency noise of deep-submicron MOSFETs,” Trans. on Electron Dev., vol. 52, pp. 1576-1588, 2005.
A.P. van der Wel, E.A.M. Klumperink, J.S. Kolhatkar, E. Hoekstra, M.S. Snoeij, C. Salm, H. Wallinga, B. Nauta, “Low-Frequency Noise Phenomena in Switched MOSFETs,” IEEE Journal of Solid-State Circuits, vol. 42, no. 3, pp.540-550, March 2007.
M. J. Kirton and M. J. Uren, “Noise in solid-state microstructures: A new perspective on individual defects, interface states and sow-frequency (1/f) noise,” Advances in Physics, vol. 38, p. 367-468, 1989.
G. Wirth, R. da Silva and R. Brederlow, “Statistical model for the circuit bandwidth dependence of low-frequency noise in deep-submicrometer MOSFETs,” Trans. on Electron Devices, vol. 54, pp.340-345, Feb. 2007.
G. Wirth, R. da Silva, P. Srinivasan, J. Krick and R. Brederlow. “Statistical model for MOSFET low-frequency noise under cyclo-stationary conditions,” International Electron Devices Meeting, p.30.5.1-4, 2009.
B. Kaczer, T. Grasser, Ph. J. Rousse, J. Martin-Martinez, R. O’Connor, B. J. O’Sullivan, and G. Groeseneken, “Ubiquitous relaxation in BTI stressing—new evaluation and insights,” International Reliability Physics Symposium, pp. 20-27, 2008.
T. Grasser, H. Reisinger, P.-J. Wagner, F. Schanovsky, W. Goes and B. Kaczer, “The time dependent defect spectroscopy (TDDS) for the characterization of the bias temperature instability,” International Reliability Physics Symposium, pp. 16-25, 2010.
J. B. Velamala, K. B. Sutaria, H. Shimizu, H. Awano, T. Sato, G. Wirth, Yu Cao, “Compact modeling of statistical BTI under trapping/detrapping,” IEEE Transactions on Electron Devices, vol.60, no.11, pp.3645-3654, Nov. 2013
J. B. Velamala, K. Sutaria, H. Shimizu, H. Awano, T. Sato, Y. Cao, “Statistical aging under dynamic voltage scaling: A logarithmic model approach,” Custom Integrated Circuits Conference, pp. 1-4, 2012.
K. Sutaria, J. Velamala, V. Ravi, G. Wirth, T. Sato, Y. Cao, “Multilevel reliability simulation for IC design,” pp. 719-749, in Bias Temperature Instability for Devices and Circuits, edited by T. Grasser, Springer, 2014.
K. B. Sutaria, J. B. Velamala, C. Kim, T. Sato, Y. Cao, “Aging statistics based on trapping/detrapping: Compact modeling and silicon validation,” IEEE Transactions on Device and Materials Reliability, vol. 14, no. 2, pp. 607-615, June 2014.
M. Denais, C. R. Parthasarathy, G. Ribes, Y. Rey-Tauriac, N. Revil, A. Bravaix, V. Huard, F. Perrier, “On-the-fly characterization of NBTI in ultra-thin gate oxide PMOSFET’s,” International Electron Devices Meeting, pp. 109-112, 2004.
H. Reisinger, O. Blank, W. Heinrigs, A. Muhlhoff, W. Gustin, C. Schlunder, “Analysis of NBTI degradation- and recovery-behavior based on ultra-fast VT-measurements,” International Reliability Physics Symposium, 2006.
K. B. Sutaria, A. Ramakumar, R. Zhu, R. Rajeev, Y. Ma, Y. Cao, “BTI-induced aging under random stress waveforms: Modeling, simulation and silicon Validation,” Design Automation Conference, pp. 1-6, 2014.
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Sutaria, K.B., Velamala, J.B., Ramkumar, A., Cao, Y. (2015). Compact Modeling of BTI for Circuit Reliability Analysis. In: Reis, R., Cao, Y., Wirth, G. (eds) Circuit Design for Reliability. Springer, New York, NY. https://doi.org/10.1007/978-1-4614-4078-9_6
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