Charge Trapping Phenomena in MOSFETS: From Noise to Bias Temperature Instability

Chapter

Abstract

Charge trapping phenomena is known to be a major reliability concern in modern MOSFETS, dominating low-frequency noise behavior and playing a significant role in aging effects such as Bias Temperature Instability (BTI). In this chapter we address this reliability issue.

Keywords

SiO2 Autocorrelation Convolution 

Notes

Acknowledgments

Gilson Wirth and Roberto da Silva thank CNPq and FAPERGS for research grants that partially support the work reported here.

References

  1. 1.
    G Wirth, J Koh, R da Silva, R Thewes and R Brederlow, “Modeling of Statistical Low-Frequency Noise of Deep-Submicron MOSFETs.”, IEEE Trans. Electron Dev., 52, p.1576–1588 (2005).Google Scholar
  2. 2.
    G Wirth, R da Silva and R Brederlow. “Statistical Model for the Circuit Bandwidth Dependence of Low-Frequency Noise in Deep-Submicrometer MOSFETs”, IEEE Trans. Electron Dev., 54, p. 340–345 ( 2007).Google Scholar
  3. 3.
    G Wirth, R da Silva, P Srinivasan, J Krick and R Brederlow. “Statistical model for MOSFET low-frequency noise under cyclo-stationary conditions” Int Electron Dev Meeting - IEDM 2009, p. 30.5.1-4, (2009).Google Scholar
  4. 4.
    G Wirth and R da Silva, “Low-Frequency Noise Spectrum of Cyclo-Stationary Random Telegraph Signals”, Electrical Eng., 90, p. 435–41 (2008).Google Scholar
  5. 5.
    R da Silva, G Wirth and L Brusamarello. “An appropriate model for the noise power spectrum produced by traps at the Si SiO interface: a study of the influence of a time-dependent Fermi level. Journal of Statistical Mechanics” Journal of Statistical Mechanics. Theory and Experiment, 2008, p. P10015 (2008).Google Scholar
  6. 6.
    R Brederlow, J Koh, G Wirth, R da Silva, M Tiebout, R Thewes. “Low Frequency Noise Considerations for CMOS Analog Circuit Design” Proceedings of the 2005 International Conf on Noise and Fluctuations (ICNF). p. 703–708 (2005).Google Scholar
  7. 7.
    R Brederlow, J Koh and R Thewes. “A physics-based low frequency noise model for MOSFETs under periodic large signal excitation” Solid-State El., 50, p. 668–73 (2006).Google Scholar
  8. 8.
    I Bloom and Y Nemirovsky. “1/f noise reduction of metal‐oxide‐semiconductor transistors by cycling from inversion to accumulation” Appl Phys Lett, 58, p.1664–6 (1991).Google Scholar
  9. 9.
    B Dierickx and E Simoen. “The decrease of ''random telegraph signal''noise in metal‐oxide‐semiconductor field‐effect transistors when cycled from inversion to accumulation”. J Appl Phys, 71, p. 2028–2029 (1992).Google Scholar
  10. 10.
    M Ertürk, T Xia and W Clark. “Gate voltage dependence of MOSFET 1/f noise statistics”. IEEE Electron Dev Let., 28, p. 812–814 (2007).Google Scholar
  11. 11.
    A van der Wel, E Klumperink, E Hoekstra and B Nauta. “Relating random telegraph signal noise in metal-oxide-semiconductor transistors to interface trap energy distribution” Appl Phys Lett., 87, p. 183507 (2005).Google Scholar
  12. 12.
    S Machlup, “Noise in Semiconductors: Spectrum of a Two‐Parameter Random Signal” J Appl Phys, 35, p. 341–343 (1954).Google Scholar
  13. 13.
    A Roy and C Enz, “Analytical Modeling of Large-Signal Cyclo-Stationary Low-Frequency Noise with Arbitrary Periodic Input” IEEE Trans. Electron Dev., 54, p.2537-2545 (2007).Google Scholar
  14. 14.
    M Kirton and M Uren, “Noise in solid-state microstructures: A new perspective on individual defects, interface states and low-frequency (1/ƒ) noise” Adv. in Physics, 38, p. 367–468 (1989).Google Scholar
  15. 15.
    Ekbote, S.; Benaissa, K.; Obradovic, B.; Liu, S.; Shichijo, H.; Hou, F.; Blythe, T.; Houston, T.W.; Martin, S.; Taylor, R.; Singh, A.; Yang, H.; Baldwin, G, “45nm Low-Power CMOS SoC Technology with Aggressive Reduction of Random Variation for SRAM and Analog Transistors” 2008 VLSI Tech. Symp., p. 160–161 (2008).Google Scholar
  16. 16.
    Wirth, Gilson I. ; da Silva, Roberto ; Kaczer, Ben. “Statistical Model for MOSFET Bias Temperature Instability Component Due to Charge Trapping”. IEEE Transactions on Electron Devices, p. 2743–2751 (2011).Google Scholar
  17. 17.
    Ashraf, Nabil ; Vasileska, Dragica ; Wirth, Gilson ; Srinivasan, P. “Accurate Model for the Threshold Voltage Fluctuation Estimation in 45-nm Channel Length MOSFET Devices in the Presence of Random Traps and Random Dopants”. IEEE Electron Device Letters, p.1044–1046 (2011).Google Scholar
  18. 18.
    Camargo, Vinícius V. A. ; Ashraf, Nabil ; BRUSAMARELLO, Lucas ; Vasileska, Dragica ; Wirth, Gilson. “Impact of RDF and RTS on the performance of SRAM cells”. Journal of Computational Electronics, p. 122–127, (2010).Google Scholar
  19. 19.
    E Klumperink, S Gierkink, A van der Wel, and B Nauta; "Reducing MOSFET 1/f noise and power consumption by switched biasing ," Solid-State Circuits, IEEE Journal of , vol.35, no.7, pp.994-1001 (2000).CrossRefGoogle Scholar
  20. 20.
    D. K. Schroder, “Negative bias temperature instability: What do we understand?”, Microelectron. Reliab., vol. 47 no. 6, pp. 841–852, (2007).CrossRefGoogle Scholar
  21. 21.
    S. E. Rauch, “Review and reexamination of reliability effects related to NBTI statistical variations,” IEEE Trans. Device Mater. Rel., vol. 7, no. 4, pp. 524–530, (2007).CrossRefGoogle Scholar
  22. 22.
    B. Kaczer, T. Grasser, J. Martin-Martinez, E. Simoen, M. Aoulaiche, Ph. J. Roussel, and G. Groeseneken, “NBTI from the Perspective of Defect States with Widely Distributed Times,” Proc. Int. Rel. Phys. Symp., p. 55 (2009).Google Scholar
  23. 23.
    T. Grasser and B. Kaczer, “Evidence That Two Tightly Coupled Mechanisms Are Responsible for Negative Bias Temperature Instability in Oxynitride MOSFETs”, IEEE Trans. on Electron Dev., vol. 56, pp. 1056–1062 (2009).CrossRefGoogle Scholar
  24. 24.
    Ang, D.; Teo, Z.; Ho, T.; Ng, C.; , "Reassessing the mechanisms of negative-bias temperature instability by repetitive stress/relaxation experiments," Device and Materials Reliability, IEEE Transactions on, vol. 11 , no. 1, pp. 19 – 34 (2011).CrossRefGoogle Scholar

Copyright information

© Springer Science+Business Media New York 2015

Authors and Affiliations

  1. 1.Electrical Engineering DepartmentUniversidade Federal do Rio Grande do Sul (UFRGS)Porto AlegreBrazil
  2. 2.Physics InstituteUFRGSPorto AlegreBrazil

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