Charge Trapping Phenomena in MOSFETS: From Noise to Bias Temperature Instability



Charge trapping phenomena is known to be a major reliability concern in modern MOSFETS, dominating low-frequency noise behavior and playing a significant role in aging effects such as Bias Temperature Instability (BTI). In this chapter we address this reliability issue.


Fermi Level Trap Density Charge Trapping Bias Point Threshold Voltage Shift 
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Gilson Wirth and Roberto da Silva thank CNPq and FAPERGS for research grants that partially support the work reported here.


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© Springer Science+Business Media New York 2015

Authors and Affiliations

  1. 1.Electrical Engineering DepartmentUniversidade Federal do Rio Grande do Sul (UFRGS)Porto AlegreBrazil
  2. 2.Physics InstituteUFRGSPorto AlegreBrazil

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