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InGaAs Submonolayer Quantum-Dot Photonic-Crystal LEDs for Fiber-Optic Communications

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Book cover Quantum Dot Devices

Part of the book series: Lecture Notes in Nanoscale Science and Technology ((LNNST,volume 13))

Abstract

An InGaAs submonolayer (SML) quantum-dot photonic-crystal light-emitting diode (QD PhC-LED) with for fiber-optic applications is reported. The active region of the device contains three InGaAs SML QD layers. Each of the InGaAs SML QD layers is formed by alternate depositions of InAs (<1 ML) and GaAs. A maximum CW output power of 0.34 mW at 20 mA has been obtained in the 980 nm range. The internally reflected spontaneous emission can be extracted and collimated out of the photonic-crystal etched holes. High-resolution imaging studies indicate that the device emits narrower light beams mainly through the photonic-crystal etched holes making it suitable for fiber-optic applications.

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  1. Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute, Chutung 310, Hsinchu, Taiwan

    Hung-Pin D. Yang

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  1. Technology, State Key Laboratory of Electronic, University of Electronic Science and, Thin Film and Integrated Devices, Chengdu, 610054, China, People's Republic

    Zhiming M. Wang

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Yang, HP.D. (2012). InGaAs Submonolayer Quantum-Dot Photonic-Crystal LEDs for Fiber-Optic Communications. In: Wang, Z. (eds) Quantum Dot Devices. Lecture Notes in Nanoscale Science and Technology, vol 13. Springer, New York, NY. https://doi.org/10.1007/978-1-4614-3570-9_8

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