Abstract
In Chap. 4, it has been shown that after a single-point trim at room temperature the output frequency of mobility-based oscillators is characterized by a strong temperature dependence, which is larger then ± 30% over the commercial temperature range from − 40 to + 85 ∘ C. However, if an ideal temperature compensation is applied, their inaccuracy is in the order of 1% over the same temperature range. As has been shown in Chap. 2, such inaccuracy is low enough for a large variety of applications, including Wireless Sensor Network (WSN) nodes. This chapter discusses how to keep such level of inaccuracy when going from an ideal to a practical temperature compensation scheme.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Notes
- 1.
In package datasheets the junction-to-ambient thermal resistance is also often reported, which for the simple model presented is equal to \({R}_{ja} = {R}_{jc} + {R}_{ja}\).
- 2.
Throughout this chapter, the terms batch-calibration or correction (curvature correction, non-linear correction) refer to the procedure of estimating the average error of a production batch from the measurements of a limited number of samples from that batch, and by adjusting all individual samples in the same manner and by the same amount based on that estimate.
- 3.
With reference to the symbols used in Sect. 5.6.4, for α = 18, the bs = 1 phase is the same as in the case α = 2, while the length in the bs = 0 phase has been assumed equal to \({T}_{1} + (\alpha - 1){T}_{2} = 50\,\mu \textrm{ s} + 17 \cdot 20\,\mu \textrm{ s} = 390\,\mu \textrm{ s}\).
- 4.
A third or fourth-order polynomial would be sufficient to compensate for the third-order non-linearity of V be , which is usually the main residual non-linearity. A sixth-order polynomial is employed in this work to compensate the strong non-linearity at high temperature due to leakage.
- 5.
Note that the order of the polynomials P 7( ⋅) and Q 4( ⋅) is the minimum required for the error due to the non-linearity of the compensation to be negligible compared to the spread among the samples.
- 6.
The up-date rate of N { div} depends on the temperature variations rate in the chosen application.
- 7.
Note that a faster sampling rate is adopted for the temperature sensor with respect to that (2.2 Sa/s) employed for the measurements presented in Sect. 5.7. Though this could result in a larger temperature error, it is allowed because, as shown earlier in this section, the full accuracy of the temperature sensor is not required for the reference’s compensation.
- 8.
The time constant of the exponential settling is in this case τ2 = 180 s due to the lack of induced air flow on the sample and the consequent increase in thermal resistance R pkg .
References
NXP Semiconductor (2000) Integrated circuit packages data handbook. http://www.standardics.nxp.com/packaging/handbook/ Accessed May 2012
Linear Technologies (2006) Thermal resistance table. http://www.linear.com/designtools/packaging/Linear_Technology_Thermal_Resistance_Table.pdf Accessed December 2010
Sofia J (1995) Analysis of thermal transient data with synthesized dynamic models for semiconductor devices. IEEE Trans Comp Packag Manuf Technol A 18(1):39–47. DOI 10.1109/95.370733
Pertijs M, Makinwa K, Huijsing J (2005) A CMOS smart temperature sensor with a 3σ inaccuracy of ± 0.1 ∘ C from − 55 ∘ C to 125 ∘ C. IEEE J Solid State Circ 40(12):2805–2815. DOI 10.1109/JSSC.2005.858476
Aita A, Pertijs M, Makinwa K, Huijsing J (2009) A CMOS smart temperature sensor with a batch-calibrated inaccuracy of ± 0.25 ∘ C (3σ) from − 70 ∘ C to 130 ∘ C. In: ISSCC Dig. Tech. Papers, pp 342–343, 343a. DOI 10.1109/ISSCC.2009.4977448
Duarte D, Geannopoulos G, Mughal U, Wong K, Taylor G (2007) Temperature sensor design in a high volume manufacturing 65nm CMOS digital process. In: Proc. IEEE Custom Integrated Circuits Conf. (CICC), pp 221–224. DOI 10.1109/CICC. 2007.4405718
Lakdawala H, Li Y, Raychowdhury A, Taylor G, Soumyanath K (2009) A 1.05 V 1.6 mW 0.45 ∘ C 3σ-resolution ΣΔ-based temperature sensor with parasitic-resistance compensation in 32 nm CMOS. IEEE J Solid State Circ (12):3621–3630
Floyd MS, Ghiasi S, Keller TW, Rajamani K, Rawson FL, Rudbio JC, Ware MS (2007) System power management support in the IBM POWER6 microprocessor. IBM J Res Develop 51(6):733–746
Saneyoshi E, Nose K, Kajita M, Mizuno M (2008) A 1.1V 35 μm × 35 μm thermal sensor with supply voltage sensitivity of 2 ∘ C/10% -supply for thermal management on the SX-9 supercomputer. In: IEEE Symposium on VLSI Circuits Dig. Tech. Papers, pp 152–153. DOI 10.1109/VLSIC.2008.4585987
Chen P, Chen CC, Peng YH, Wang KM, Wang YS (2010) A time-domain SAR smart temperature sensor with curvature compensation and a 3σ inaccuracy of − 0.4 ∘ C ˜ +0.6 ∘ C over a 0 ∘ C to 90 ∘ C range. IEEE J Solid State Circ 45(3):600–609. DOI 10.1109/JSSC.2010.2040658
Pertijs MAP, Huijsing JH (2006) Precision temperature sensors in CMOS technology. Springer, Dordrecht
Souri K, Kashmiri M, Makinwa K (2009) A CMOS temperature sensor with an energy-efficient Zoom ADC and an inaccuracy of ± 0.25 ∘ C (3σ) from − 40 ∘ C to 125 ∘ C. In: ISSCC Dig. Tech. Papers, pp 310–311, 311a. DOI 10.1109/ISSCC.2009.4977448
Krummenacher P, Oguey H (1989) Smart temperature sensor in CMOS technology. Sensor Actuator A Phys 22(1–3):636–638. DOI 10.1016/0924-4247(89)80048-2
Kim JP, Yang W, Tan HY (2003) A low-power 256-Mb SDRAM with an on-chip thermometer and biased reference line sensing scheme. IEEE J Solid State Circ 38(2):329–337. DOI 10.1109/JSSC.2002.807170
Szajda K, Sodini C, Bowman H (1996) A low noise, high resolution silicon temperature sensor. IEEE J Solid State Circ 31(9):1308–1313. DOI 10.1109/4.535415
Creemer J, Fruett F, Meijer G, French P (2001) The piezojunction effect in silicon sensors and circuits and its relation to piezoresistance. IEEE Sensor J 1(2):98–108. DOI 10.1109/JSEN.2001.936927
Meijer G, Gelder RV, Nooder V, Drecht JV, Kerkvliet H (1989) A three-terminal intergrated temperature transducer with microcomputer interfacing. Sensor Actuator 18(2):195–206. DOI 10.1016/0250-6874(89)87018-0
Kashmiri SM, Pertijs MAP, Makinwa KAA (2010) A thermal-diffusivity-based frequency reference in standard CMOS with an absolute inaccuracy of ± 0. 1% from − 55 ∘ C to 125 ∘ C. IEEE J Solid State Circ 45(12):2510–2520
Norsworthy S, Schreier R, Temes G (eds) (1996) Delta-sigma data converters: theory, design, and simulation. Wiley, Hoboken
Meijer G, Wang G, Fruett F (2001) Temperature sensors and voltage references implemented in CMOS technology. IEEE Sensor J 1(3):225–234. DOI 10.1109/JSEN. 2001.954835
Meijer GC (1986) Thermal sensors based on transistors. Sensors Actuators 10(1–2):103–125. DOI 10.1016/0250-6874(86)80037-3
Sebastiano F, Breems L, Makinwa K, Drago S, Leenaerts D, Nauta B (2010a) A 1.2-V 10-μW NPN-based temperature sensor in 65-nm CMOS with an inaccuracy of 0.2 ∘ C (3σ) from − 70 ∘ C to 125 ∘ C. IEEE J Solid State Circ 45(12):2591–2601
Aita A, Makinwa K (2007) Low-power operation of a precision CMOS temperature sensor based on substrate PNPs. In: IEEE Sensors, pp 856–859. DOI 10.1109/ ICSENS.2007.4388536
You F, Embabi H, Duque-Carrillo J, Sanchez-Sinencio E (1997) An improved tail current source for low voltage applications. IEEE J Solid State Circ 32(8):1173–1180. DOI 10.1109/4.604073
Baker RJ, Li HW, Boyce DE (1997) CMOS circuit design, layout, and simulations. IEEE, New York, p 637
Pouydebasque A, Charbuillet C, Gwoziecki R, Skotnicki T (2007) Refinement of the subthreshold slope modeling for advanced bulk CMOS devices. IEEE Trans Electron Dev 54(10):2723–2729. DOI 10.1109/TED.2007.904483
Enz C, Temes G (1996) Circuit techniques for reducing the effects of op-amp imperfections: autozeroing, correlated double sampling, and chopper stabilization. Proc IEEE 84(11):1584–1614
Sebastiano F, Breems L, Makinwa K, Drago S, Leenaerts D, Nauta B (2011) A 65-nm CMOS temperature-compensated mobility-based frequency reference for wireless sensor networks. IEEE J Solid State Circ, 46(7):1544–1552
De Smedt V, De Wit P, Vereecken W, Steyaert M (2009) A 66 μW 86 ppm/ ∘ C fully-integrated 6 MHz wienbridge oscillator with a 172 dB phase noise FOM. IEEE J Solid State Circ 44(7):1990–2001. DOI 10.1109/JSSC.2009.2021914
Lee J, Cho S (2009) A 10MHz 80μW 67 ppm/ ∘ C CMOS reference clock oscillator with a temperature compensated feedback loop in 0.18μm CMOS. In: 2009 Symposium on VLSI Circuits Dig. Tech. Papers, pp 226–227
Ueno K, Asai T, Amemiya Y (2009) A 10MHz 80μW 67 ppm/ ∘ C CMOS reference clock oscillator with a temperature compensated feedback loop in 0.18μm CMOS. In: Proc. ESSCIRC, pp 226–227
Author information
Authors and Affiliations
Rights and permissions
Copyright information
© 2013 Springer Science+Business Media New York
About this chapter
Cite this chapter
Sebastiano, F., Breems, L.J., Makinwa, K.A.A. (2013). Temperature Compensation. In: Mobility-based Time References for Wireless Sensor Networks. Analog Circuits and Signal Processing. Springer, New York, NY. https://doi.org/10.1007/978-1-4614-3483-2_5
Download citation
DOI: https://doi.org/10.1007/978-1-4614-3483-2_5
Published:
Publisher Name: Springer, New York, NY
Print ISBN: 978-1-4614-3482-5
Online ISBN: 978-1-4614-3483-2
eBook Packages: EngineeringEngineering (R0)