Abstract
The purpose of this chapter is to give a detailed description of circuit techniques that were used in this work in the three gm-C filter implementations, of which the experimental results are presented in Chap. 7. Consequently, the focus is on circuit techniques that are suitable for use when designing and implementing low-voltage wideband analog low-pass filters with programmable voltage gain in standard ultra-deep-submicron (<0.2-μm) or nanoscale (sub-100-nm) CMOS technologies. The low supply voltage (≈1.2 V) of the modern CMOS technologies limits the voltage swing and, thus, the dynamic range in analog integrated circuits. The voltage headroom can be increased by reducing the number of stacked transistors. Therefore, in this work, the functionality of the main signal processing circuits was improved by employing parallel-connected control circuits instead of using, for example, cascode transistors or other conventional circuit solutions previously utilized with higher supply voltages. Some of the circuit techniques that are presented in this chapter have been developed in this work. Parts of them are improved or modified versions of circuits previously proposed by others that were tailored in this work to fulfill the needs determined by the low-voltage wideband receiver applications adopted in this work. This chapter is mainly based on the contents of publications [1] and [2].
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Notes
- 1.
- 2.
This section is based on [22] (Copyright © 2007 IEEE. All rights reserved. Reprinted with permission).
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Saari, V., Ryynänen, J., Lindfors, S. (2012). Gm-C Filters for CMOS Direct-Conversion Receivers. In: Continuous-Time Low-Pass Filters for Integrated Wideband Radio Receivers. Analog Circuits and Signal Processing. Springer, Boston, MA. https://doi.org/10.1007/978-1-4614-3366-8_6
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