Abstract
In this chapter a novel differential current re-use LNA architecture with improved isolation for integrated 77 GHz receivers in SiGe technology is presented. The fabricated chips can be operated either in differential or single-ended mode. The narrow-band LNA shows a gain of 12 dB and reverse isolation better than − 40 dB in both modes with a differential SSB noise figure around 6.5 dB. An input-related 1 dB compression point of − 13 dBm is achieved with a total power consumption of 79 mW from a 3.3 V supply. The occupied chip area is 728 × 728 μ m2. The presented LNA shows the highest gain per stage at a comparable noise figure with simultaneous high linearity and low power consumption. Furthermore, a broadband LNA with 30% fractional bandwidth in SiGe technology is presented. The LNA shows a differential gain of 19.7 dB at the center frequency of 66 GHz and a noise figure of 5.8 dB at the upper corner frequency of 77 GHz. It dissipates 40 mW from a 3.3 V supply and an output related 1-dB compression point of at least + 3 dBm is achieved. The presented broadband LNA performs favorable against other published V-band LNAs in silicon technology. It shows the highest gain per stage, the highest gain-bandwidth product, as well as the highest output-referred 1-dB compression point at comparable power consumption.
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Kissinger, D. (2012). Differential 77-GHz Current Re-Use Low-Noise Amplifier. In: Millimeter-Wave Receiver Concepts for 77 GHz Automotive Radar in Silicon-Germanium Technology. SpringerBriefs in Electrical and Computer Engineering(). Springer, Boston, MA. https://doi.org/10.1007/978-1-4614-2290-7_6
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