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Differential 77-GHz Current Re-Use Low-Noise Amplifier

  • Dietmar Kissinger
Chapter
Part of the SpringerBriefs in Electrical and Computer Engineering book series (BRIEFSELECTRIC)

Abstract

In this chapter a novel differential current re-use LNA architecture with improved isolation for integrated 77 GHz receivers in SiGe technology is presented. The fabricated chips can be operated either in differential or single-ended mode. The narrow-band LNA shows a gain of 12 dB and reverse isolation better than − 40 dB in both modes with a differential SSB noise figure around 6.5 dB. An input-related 1 dB compression point of − 13 dBm is achieved with a total power consumption of 79 mW from a 3.3 V supply. The occupied chip area is 728 × 728 μ m2. The presented LNA shows the highest gain per stage at a comparable noise figure with simultaneous high linearity and low power consumption. Furthermore, a broadband LNA with 30% fractional bandwidth in SiGe technology is presented. The LNA shows a differential gain of 19.7 dB at the center frequency of 66 GHz and a noise figure of 5.8 dB at the upper corner frequency of 77 GHz. It dissipates 40 mW from a 3.3 V supply and an output related 1-dB compression point of at least + 3 dBm is achieved. The presented broadband LNA performs favorable against other published V-band LNAs in silicon technology. It shows the highest gain per stage, the highest gain-bandwidth product, as well as the highest output-referred 1-dB compression point at comparable power consumption.

Keywords

Noise Figure Conversion Gain Reverse Isolation Input Return Loss Cascode Topology 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Science+Business Media, LLC 2012

Authors and Affiliations

  • Dietmar Kissinger
    • 1
  1. 1.University of Erlangen-NurembergErlangenGermany

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