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Time-Dependent Dielectric Breakdown (TDDB) and Future Directions

  • Ming He
  • Toh-Ming Lu
Chapter
Part of the Springer Series in Materials Science book series (SSMATERIALS, volume 157)

Abstract

More and more attention has been devoted to the thermal and electrical stability of metal–dielectric interfaces in microelectronic devices. One of the major driving forces is the need to understand the mechanisms of dielectric breakdown with different metal–dielectric interfaces. A dielectric will always break down under severe stress, but an unstable metal–dielectric interface will generally cause an early breakdown and thereby shorten the dielectric lifetime. Therefore, it is important to understand the link behind dielectric degradation and interface stability in order to accurately estimate the operating lifetime of electronic devices. Here we will discuss some of the proposed mechanisms regarding this issue, and correlate them with the thermal and electrical stability results of the interfaces presented in the previous chapters.

Keywords

Dielectric Film Dielectric Breakdown Dielectric Interface Diffusion Front Dielectric Capacitor 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Science+Business Media, LLC 2012

Authors and Affiliations

  1. 1.Department of Physics, Applied Physics and AstronomyRensselaer Polytechnic InstituteTroyUSA
  2. 2.Center for Integrated ElectronicsRensselaer Polytechnic InstituteTroyUSA

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