Abstract
Since the invention of IC technology, Al has been the dominant metal for interconnect wiring. This is because Al has a relatively low resistivity, and it can be easily plasma etched by Cl-based gases, greatly simplifying the patterning steps. Also, Al has excellent compatibility with SiO2, the traditional ILD material for larger-feature-size devices.
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He, M., Lu, TM. (2012). Al-Dielectric Interfaces. In: Metal-Dielectric Interfaces in Gigascale Electronics. Springer Series in Materials Science, vol 157. Springer, New York, NY. https://doi.org/10.1007/978-1-4614-1812-2_4
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