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SRAM Bitcell Design Using Unidirectional Devices

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Robust SRAM Designs and Analysis

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Abstract

For ultra-low power applications, steep sub-threshold slope transistors are promising candidate to replace the traditional MOSFETs. The limitations of Inter-Band Tunnel Field Effect Transistors (TFETs) due to unidirectional current conduction behaviour have been explored in this chapter for successful realization of compact SRAM bitcell for ultra-low supply voltages. Since, asymmetric current conduction in TFETs limits the viability of realization of 6T SRAM bitcells. A case study of 6T SRAM bitcell design using Si-TFETs for reliable operation with low leakage at ultra low voltages is presented. It is also demonstrated that a functional 6T TFET SRAM design with comparable stability margins and faster performances at low voltages can be realized using unidirectional TFETs devices when compared with the 7T TFET SRAM bitcell.

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Authors and Affiliations

  1. Indian Institute of Information Technology Design and Manufacturing, Dumna Airport Road, Jabalpur, India

    Jawar Singh

  2. University of North Texas, Discovery Park, 3940 N. Elm, Room F247, Denton, USA

    Saraju P. Mohanty

  3. University of Bristol, Merchant Venturers Building Woodland Rd., Bristol, UK

    Dhiraj K. Pradhan

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  1. Jawar Singh
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  2. Saraju P. Mohanty
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  3. Dhiraj K. Pradhan
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Singh, J., Mohanty, S.P., Pradhan, D.K. (2013). SRAM Bitcell Design Using Unidirectional Devices. In: Robust SRAM Designs and Analysis. Springer, New York, NY. https://doi.org/10.1007/978-1-4614-0818-5_5

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  • DOI: https://doi.org/10.1007/978-1-4614-0818-5_5

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