Abstract
In the past, device engineers have often neglected the contribution of metal interconnect to the on-state resistance (R on). For larger sized MOSFETs and power devices, this is no longer true and extensive research has shown that interconnects are now one of the major contributors to R on [78]. This chapter will build an example of a 3D metal interconnect, show how to calculate the interconnect resistance and demonstrate its influence on a large sized MOSFET.
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Reference
Modeling and Analysis of Metal Interconnect Resistance of Power IC’s. Chen, Y. Fu, Y. Cheng, X. Wu, T.X. Shen, Z.J. s.l. : 19th International Symposium on Power Semiconductor Devices and IC’s, 2007. ISPSD ’07., 27–31 May 2007. 1-4244-1096-7.
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© 2012 Springer Science+Business Media, LLC
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Li, S., Fu, Y. (2012). 3D Interconnect Simulation. In: 3D TCAD Simulation for Semiconductor Processes, Devices and Optoelectronics. Springer, New York, NY. https://doi.org/10.1007/978-1-4614-0481-1_8
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DOI: https://doi.org/10.1007/978-1-4614-0481-1_8
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