Smart Power Technology and Power Semiconductor Devices



Smart power IC has gained popularity in the analog world. A typical power IC includes power devices, analog part, digital part and some passive devices. Figure 7.1 illustrates the interrelationship between these components. Traditionally, power ICs and digital ICs have been considered to be two very different technologies and were manufactured using different processes.


Breakdown Voltage Bipolar Junction Transistor Power Device Device Simulation Drift Region 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


  1. 16.
    S.M.Sze. Physics of semiconductor devices, 2nd edition. John Wiley & Sons, 1981.Google Scholar
  2. 40.
    Chuang, S. L. Physics of Optoelectronic Devices. New York : Wiley,, 1995.Google Scholar
  3. 58.
    Crosslight Software. APSYS Manual. Burnaby,BC,Canada : Crosslight Software, 2006.Google Scholar
  4. 61.
    S.M.SZE. Semiconductor Devices Physics and Technology. s.l. : John Wiley and Sons, 1985. 0-471-87424-8.Google Scholar
  5. 70.
    Deep Trench Isolation for a 50V 0.35 μm Based Smart Power Technology. F. De Pestel, P. Coppens, H. De Vleeschouwer, P. Colson, S. Boonen, T. Colpaert,P. Moens, D. Bolognesi, G. Coudenys, M. Tack. Estoril,Portugal : 33rd European Solid-state Device Research Conference, ESSDERC, 2003.Google Scholar
  6. 71.
    Improvement of Breakdown Characteristics of LDMOSFETs with Uneven Racetrack Sources for PDP Driver Applications. Tae Moon Roh, Dae Woo Lee, Jongdae Kim, Jin Gun Koo, and Kyoung-Ik Cho. Osaka : Proceedings of the 13th International Symposium on Power Semiconductor Devices and ICs, 2001. ISPSD '01. , 2001.Google Scholar
  7. 72.
    Baliga, B.Jayant. Fundamentals of Power Semiconductor Devices. s.l. : Springer, 2010. 978-0-387-47313-0.Google Scholar
  8. 73.
    —. Modern Power Devices. s.l. : Krieger Publishing Company, 1992.Google Scholar
  9. 74.
    Grabinski, Wladyslaw. Power/HVMOS Devices Compact Modeling. s.l. : Springer, 2010.Google Scholar
  10. 75.
    Wikipedia. Thermal conductivity. [Online] Scholar
  11. 76.
    HEXFET. [Online] International Rectifier. Scholar
  12. 77.
    Influence of total-dose radiation on the electrical characteristics of SOI MOSFETs. J.A. Felix, J.R. Schwank, C.R. Cirba,R.D. Schrimpf, M.R. Shancyfelt, D.M.Fleetwood, P.E. Dodd,. 332–341, s.l. : Microelectronic Engineering, 2004, Vol. 72.Google Scholar

Copyright information

© Springer Science+Business Media, LLC 2012

Authors and Affiliations

  1. 1.Crosslight Software, Inc.BurnabyCanada

Personalised recommendations