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Smart Power Technology and Power Semiconductor Devices

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3D TCAD Simulation for Semiconductor Processes, Devices and Optoelectronics

Abstract

Smart power IC has gained popularity in the analog world. A typical power IC includes power devices, analog part, digital part and some passive devices. FigureĀ 7.1 illustrates the interrelationship between these components. Traditionally, power ICs and digital ICs have been considered to be two very different technologies and were manufactured using different processes.

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References

  1. S.M.Sze. Physics of semiconductor devices, 2nd edition. John Wiley & Sons, 1981.

    Google ScholarĀ 

  2. Chuang, S. L. Physics of Optoelectronic Devices. New York : Wiley,, 1995.

    Google ScholarĀ 

  3. Crosslight Software. APSYS Manual. Burnaby,BC,Canada : Crosslight Software, 2006.

    Google ScholarĀ 

  4. S.M.SZE. Semiconductor Devices Physics and Technology. s.l. : John Wiley and Sons, 1985. 0-471-87424-8.

    Google ScholarĀ 

  5. Deep Trench Isolation for a 50V 0.35 Ī¼m Based Smart Power Technology. F. De Pestel, P. Coppens, H. De Vleeschouwer, P. Colson, S. Boonen, T. Colpaert,P. Moens, D. Bolognesi, G. Coudenys, M. Tack. Estoril,Portugal : 33rd European Solid-state Device Research Conference, ESSDERC, 2003.

    Google ScholarĀ 

  6. Improvement of Breakdown Characteristics of LDMOSFETs with Uneven Racetrack Sources for PDP Driver Applications. Tae Moon Roh, Dae Woo Lee, Jongdae Kim, Jin Gun Koo, and Kyoung-Ik Cho. Osaka : Proceedings of the 13th International Symposium on Power Semiconductor Devices and ICs, 2001. ISPSD '01. , 2001.

    Google ScholarĀ 

  7. Baliga, B.Jayant. Fundamentals of Power Semiconductor Devices. s.l. : Springer, 2010. 978-0-387-47313-0.

    Google ScholarĀ 

  8. ā€”. Modern Power Devices. s.l. : Krieger Publishing Company, 1992.

    Google ScholarĀ 

  9. Grabinski, Wladyslaw. Power/HVMOS Devices Compact Modeling. s.l. : Springer, 2010.

    Google ScholarĀ 

  10. Wikipedia. Thermal conductivity. [Online] http://en.wikipedia.org/wiki/Thermal_conductivity.

    Google ScholarĀ 

  11. HEXFET. [Online] International Rectifier. http://www.irf.com/technical-info/guide/device.html.

    Google ScholarĀ 

  12. Influence of total-dose radiation on the electrical characteristics of SOI MOSFETs. J.A. Felix, J.R. Schwank, C.R. Cirba,R.D. Schrimpf, M.R. Shancyfelt, D.M.Fleetwood, P.E. Dodd,. 332ā€“341, s.l. : Microelectronic Engineering, 2004, Vol. 72.

    Google ScholarĀ 

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Correspondence to Simon Li .

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Ā© 2012 Springer Science+Business Media, LLC

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Li, S., Fu, Y. (2012). Smart Power Technology and Power Semiconductor Devices. In: 3D TCAD Simulation for Semiconductor Processes, Devices and Optoelectronics. Springer, New York, NY. https://doi.org/10.1007/978-1-4614-0481-1_7

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  • DOI: https://doi.org/10.1007/978-1-4614-0481-1_7

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