Abstract
Recent advances in MOS integrated circuit technology have opened new, high-volume applications utilizing epitaxial silicon-on-insulating substrates. To provide good quality heteroepitaxial silicon films for the semiconductor industry, a development program has been established to improve both the crystalline quality and the fabrication techniques for the most promising current substrate, magnesium aluminum spinel.
The role of X-ray diffraction techniques in the investigation of crystal quality, substrate surface quality, and epitaxial film quality are discussed, and results interpreted as the program is traced from crystal growth/to epitaxial film analysis.
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References
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© 1972 Springer Science+Business Media New York
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Maurits, J.E.A., Hawley, A.M. (1972). X-Ray Investigations of Spinel Substrates. In: Heinrich, K.F.J., Barrett, C.S., Newkirk, J.B., Ruud, C.O. (eds) Advances in X-Ray Analysis. Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-9966-7_41
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DOI: https://doi.org/10.1007/978-1-4613-9966-7_41
Publisher Name: Springer, Boston, MA
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