Strain Effects in “in Situ” Processed Nb3Sn Conductors

  • M. Fukumoto
  • K. Katagiri
  • T. Okada
  • K. Koyanagi
  • K. Yasohama
Part of the Advances in Cryogenic Engineering Materials book series (ACRE, volume 32)

Abstract

The strain effects and mechanical properties in “in situ” processed Nb3Sn conductors have been investigated in relation to the parameters specifying the fabrication conditions. The effects of these parameters are discussed in order to provide a guide for the optimization of fabrication. The parameters are [1] Nb content in Cu-Nb alloy (25, 30 and 35 w%Nb), [2] total reduction ratio R.R. of cross-sectional area (R.R.=4700, 40000, and 250000), [3] presence/absence of Cu stabilizer with Ta barrier, and [4] heat treatment time (at 550 C for 1, 3.5, 7 and 14.2 day).

Keywords

Helium Ductility Tantalum 

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. 1.
    R. Roberge, S. Foner, E. J. McNiff, Jr., B. B. Schwartz, and J. L. Fihey, IEEE Trans. Magn. MAG-13:683 (1977).Google Scholar
  2. 2.
    J. W. Ekin, IEEE Trans. Magn. MAG-14:197(1979).CrossRefGoogle Scholar
  3. 3.
    T. Okada, M. Fukumoto, K. Yasohama, and K. Yasukochi, IEEE Trans. Magn. MAG-21:775 (1985).CrossRefGoogle Scholar
  4. 4.
    J. E. Ostenson, D. K. Finnemore, J. D. Verhoeven, and E. D. Gibson, Appl. Phys. Lett. 37:662 (1980).CrossRefGoogle Scholar
  5. 5.
    K. Yasohama, H. Ohkubo, T. Ogasawara, and K. Yasukochi, Adv. Cryo. Eng. 28:555 (1982).Google Scholar
  6. 6.
    M. Fukumoto, T. Okada, K. Yasohama, and K. Yasukochi, Adv. Cryo. Eng. 30:867 (1984).Google Scholar
  7. 7.
    G. Rupp, IEEE Trans. Magn. MAG-13:1565 (1977).CrossRefGoogle Scholar
  8. 8.
    J. F. Bussiere, D. O. Welch, and M. Suenaga, J. Appl. Phys. 51:1024 (1980).CrossRefGoogle Scholar
  9. 9.
    G. Rupp, Adv. Cryo. Eng. 26:522 (1980). The curves for a commercial Nb3Sn wire are obtained from the data for the specimen heat treated for 64 days in Fig. 6 of this reference.Google Scholar
  10. 10.
    J. W. Ekin, J. Appl. Phys. 54:303 (1983).CrossRefGoogle Scholar

Copyright information

© Plenum Press, New York 1986

Authors and Affiliations

  • M. Fukumoto
    • 1
  • K. Katagiri
    • 1
  • T. Okada
    • 1
  • K. Koyanagi
    • 1
  • K. Yasohama
    • 2
  1. 1.ISIR, Osaka UniversityIbaraki, OsakaJapan
  2. 2.College of Science and TechnologyNihon UniversityTokyoJapan

Personalised recommendations