Abstract
The widely used drift-diffusion approximation model of charge transport employs transport coefficients that depend on the local values of the electric field, doping and lattice temperature. Nonlocal effects such as velocity overshoot become important when device feature sizes have submicron dimensions. A hierarchy of higher order transport models is used to model such effects. These give good results but require the solution of additional equations.
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© 1991 Springer-Verlag New York Inc.
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Friedman, A. (1991). An augmented drift-diffusion formulation in semiconductor devices. In: Mathematics in Industrial Problems. The IMA Volumes in Mathematics and its Applications, vol 38. Springer, New York, NY. https://doi.org/10.1007/978-1-4613-9177-7_5
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DOI: https://doi.org/10.1007/978-1-4613-9177-7_5
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