Abstract
An analysis of the effect of contact potentials on photoelectric measurements with semi-conductors is made, which indicates a new method of determining the width of the forbidden energy interval for electrons in a semi-conductor. A possible application to precision determination of h/e by the photoelectric effect is indicated.
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References
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© 1991 Springer-Verlag New York Inc.
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Condon, E.U. (1991). Note on the External Photoelectric Effect of Semi-Conductors. In: Barut, A.O., Odabasi, H., van der Merwe, A. (eds) Selected Scientific Papers of E.U. Condon. Springer, New York, NY. https://doi.org/10.1007/978-1-4613-9083-1_32
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DOI: https://doi.org/10.1007/978-1-4613-9083-1_32
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