Abstract
The main elements of the theory of amorphous semiconductors are reviewed. The kinds of disorder occuring in these materials are classified. The consequences of the various kinds of disorder for electronic states and energies at and near the band edges and in the gaps are discussed. The energy spectrum is divided into ranges according to the principal characteristics of the states and the spectrum, localized vs. nonuniversal, smooth vs. fractal, etc. The effects of interactions are discussed. The general theory of transport is reviewed. The consequences of the above for the optical and the transport properties are discussed briefly.
Substantially the same material will appear in “Hydrogen in Amorphous Solids”, Nato ASI, Series B. Plenum Press (in press).
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© 1987 Springer-Verlag New York, Inc.
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Cohen, M.H. (1987). Elements of the Theory of Amorphous Semiconductors. In: Papanicolaou, G. (eds) Random Media. The IMA Volumes in Mathematics and Its Applications, vol 7. Springer, New York, NY. https://doi.org/10.1007/978-1-4613-8725-1_6
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DOI: https://doi.org/10.1007/978-1-4613-8725-1_6
Publisher Name: Springer, New York, NY
Print ISBN: 978-1-4613-8727-5
Online ISBN: 978-1-4613-8725-1
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