Abstract
If a constant voltage above a certain threshold is applied to a piece of semiconductor material with negative differential resistance periodic current oscillations are observed in certain parameter regimes. The current peaks are due to dipole waves which are generated periodically at one contact of the device and leave at the other contact. We give a refined analysis of the classical explanation of the Gunn effect as traveling waves on an infinite domain. We show that under appropriate boundary conditions multiple steady state solutions exist and that periodic solutions are generated by a Hopf bifurcation. A singular perturbation analysis of a steady moving dipole wave on a finite domain is given.
The work of this second author has been supported by the Fonds zur Förderung der wissenschaftlichen Forschung, Autria and by the Insitute for Mathematics and its Applications with funds provided by the National Science Foundation.
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© 1994 Springer-Verlag New York, Inc.
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Steinrück, H., Szmolyan, P. (1994). Analysis of the Gunn Effect. In: Coughran, W.M., Cole, J., Lloyd, P., White, J.K. (eds) Semiconductors. The IMA Volumes in Mathematics and its Applications, vol 59. Springer, New York, NY. https://doi.org/10.1007/978-1-4613-8410-6_22
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DOI: https://doi.org/10.1007/978-1-4613-8410-6_22
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