Abstract
Although several models for atomic diffusion in GaAs have been presented, they have not given strong attention to the effect of the arsenic vapor pressure, i. e., the deviation from stoichiometry, or some of them are thought to be unrealistic.
On the other hand, we have shown that the crystal growth from solution or melt under applied vapor pressure i. e., temperature difference method under controlled vapor pressure, can be explained by the equality of the arsenic chemical potentials, and the dominating point defects are arsenic interstitial atoms and arsenic vacancies, but not gallium vacancies and gallium interstitials.
On the basis of this theory, we will present models for atomic diffusion of impurities and point defects. We discuss sulfur diffusion, self-diffusion of gallium and arsenic, and silicon diffusion, they can well explain the arsenic vapor pressure dependences, and the comparison with known experiments gives reasonable values for formation energies and migration energies. We also discuss impurity-enhanced diffusion at a heterostructure interface where sharp discontinuities of gallium and aluminum chemical potentials are present.
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© 1994 Springer-Verlag New York, Inc.
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Suto, K., Nishizawa, JI. (1994). Atomic Diffusion in GaAs with Controlled Deviation from Stoichiometry. In: Coughran, W.M., Cole, J., Llyod, P., White, J.K. (eds) Semiconductors. The IMA Volumes in Mathematics and its Applications, vol 58. Springer, New York, NY. https://doi.org/10.1007/978-1-4613-8407-6_6
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DOI: https://doi.org/10.1007/978-1-4613-8407-6_6
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