Abstract
Most of the materials used in semiconductor manufacturing have granular structure. The granularity can occur on various length scales ranging from amorphous (few nanometers) to columnar grain structures (tens or hundreds of micrometers). These scales are larger than the microscopic (atomic or molecular) scale but smaller than the macroscopic scale; one refers to these regimes as the mesoscopic regimes. Pantelides [1] points out that most industrial materials are polycrystalline, amorphous, or composite, and their properties are determined by the collective microstructure at the mesoscopic level. Yet the modeling of such materials have not been seriously investigated.
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© 1994 Springer-Verlag New York, Inc.
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Friedman, A. (1994). Modeling of dopant diffusion networks. In: Mathematics in Industrial Problems. The IMA Volumes in Mathematics and its Applications, vol 57. Springer, New York, NY. https://doi.org/10.1007/978-1-4613-8383-3_3
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DOI: https://doi.org/10.1007/978-1-4613-8383-3_3
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