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Magnetic Properties of (Ge1 − xMnx) Te Alloys

  • R. W. Cochrane
  • J. O. Ström-Olsen

Abstract

In the past several years there has been a continuing effort to examine the effects of the conduction electrons on the magnetic ordering properties of localized magnetic moments in semiconductors and metals. The case of the Eu—Gd monochalcogenides1,2 provides an excellent example in which the carrier density can be varied from the semiconducting to metallic regimes within the single NaCl crystal structure by alloying across the phase diagram. Moreover, there remains a constant, localized spin (S = 7/2) at each site while the carrier concentration is changed. An alternate approach has been to study the magnetic ordering for dilute magnetic impurities doped into a nonmagnetic host whose carrier concentration can be varied in some range. Examples of such studies are Mn doped into SnTe3 and, to a lesser extent, GeTe.4,5 The samples with less than 10 at.% Mn order ferromagnetically at low temperatures in both hosts even though MnTe is itself antiferromagnetic with a Néel temperature of 306°K. For Mn-doped GeTe a detailed comparison5 between the magnetic and magnetotransport properties has been carried out on a 0.9 at.% alloy in our laboratory. In order to extend these results, we have begun a systematic examination of the magnetic and transport properties on a series of (Ge1 − xMnx) Te alloys.

Keywords

Carrier Concentration Magnetotransport Property Paramagnetic Curie Temperature Metallic Regime Electronics Research Laboratory 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Plenum Press, New York 1974

Authors and Affiliations

  • R. W. Cochrane
    • 1
  • J. O. Ström-Olsen
    • 1
  1. 1.Eaton Electronics Research LaboratoryMcGill UniversityMontrealCanada

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