Electronic Raman Scattering
This paper briefly reviews some aspects of electronic Raman scattering in simple semiconductors. Emphasis is placed on the strength of the scattering as predicted by the f-sum rule. The mechanism for light scattering by free and bound electrons in a many-valley semiconductor is outlined. Data are presented from two systematic studies of the dependence of the spectrum on donor concentration, from Doehler et al on Ge(As) and from Jain and Klein on Si(P). The gross features of the spectra may be understood in terms of a new sum rule, valid for all concentrations. It shows that the strength of the light scattering is a direct manifestation of the shortrange, central-cell, donor potential.
KeywordsDonor Concentration Metallic Regime Ground State Multiplet Electronic RAMAN Scattering Hydrogenic Ground State
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- 1.The subject of electronic Raman scattering in semiconductors will be covered in a review article by the author to appear in Raman Scattering, M. Cardona, ed. (Springer Verlag, to be published).Google Scholar
- 3.S. V. Gantsevich, V. L. Gurevich, V. D. Kagan, and R. Katilius in Light Scattering in Solids, edited by M. Balkanski (Flammarion, Paris, 1971) p. 94.Google Scholar
- 4.S. V. Gantsevich, V. L. Gurevich, and R. Katilius, Zh. Eksp. Teor. Fiz. 57, 503 (1969); Soviet Phys. JETP 30, 276 (1970).Google Scholar
- 5.N. Tzoar and E. N. Foo in Light Scattering in Solids, edited by M. Balkanski (Flammarion, Paris 1971) p. 119.Google Scholar
- J. Doehler, Phys. Rev. B (to be published).Google Scholar
- 10.Note added at the time of writing: Acting upon a suggestion of Prof. S. A. Solin, we have examined more closely the temperature-dependence of the more heavily doped samples used in parts (h-j) of Fig. 3. When the temperature is lowered from 50 to 3OK, a knee is found at 85 cm−1 for nd = 3.2x1018. It moves to 55 cm−1 for nd = 5x1018. Thus Si(P) is not as different from Ge(As) as a comparison of Figs. 2 and 3 would suggest. These results are discussed in more detail in Ref. 11.Google Scholar
- 11.K. Jain and M. V. Klein, in Proc. Third International Conference on Light Scattering in Solids, edited by M. Balkanski (Flammarian, Paris, to be published)Google Scholar
- K. Jain, S. Lai, and M. V. Klein, to be published.Google Scholar