Electronic Raman Scattering
This paper briefly reviews some aspects of electronic Raman scattering in simple semiconductors. Emphasis is placed on the strength of the scattering as predicted by the f-sum rule. The mechanism for light scattering by free and bound electrons in a many-valley semiconductor is outlined. Data are presented from two systematic studies of the dependence of the spectrum on donor concentration, from Doehler et al on Ge(As) and from Jain and Klein on Si(P). The gross features of the spectra may be understood in terms of a new sum rule, valid for all concentrations. It shows that the strength of the light scattering is a direct manifestation of the shortrange, central-cell, donor potential.
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