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Raman Scattering in Metals and Heavily Doped Semiconductors

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Theory of Light Scattering in Condensed Matter

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Abstract

Raman scattering by lattice vibrations occurs through the electrons. In metals and heavily doped semiconductors the electron- phonon interaction defines not only the intensity of the scattering, but also the shape of the spectra.

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References

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Author information

Authors and Affiliations

  1. A. F. Ioffe Physico-Technical Institute, Leningrad, USSR

    I. P. Ipatova & A. V. Subashiev

Authors
  1. I. P. Ipatova
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  2. A. V. Subashiev
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Editor information

Editors and Affiliations

  1. Solid State Sciences Division, Rome Air Development Center, Hanscom AFB, Massachusetts, USA

    Bernard Bendow

  2. Department of Physics, The City College of the City University of New York, New York, New York, USA

    Joseph L. Birman

  3. Institute of Spectroscopy, Academy of Sciences of the USSR, Akademgorodok, Moscow, USSR

    Vladimir M. Agranovich

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© 1976 Plenum Press, New York

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Ipatova, I.P., Subashiev, A.V. (1976). Raman Scattering in Metals and Heavily Doped Semiconductors. In: Bendow, B., Birman, J.L., Agranovich, V.M. (eds) Theory of Light Scattering in Condensed Matter. Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-4301-1_17

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  • DOI: https://doi.org/10.1007/978-1-4613-4301-1_17

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4613-4303-5

  • Online ISBN: 978-1-4613-4301-1

  • eBook Packages: Springer Book Archive

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