Abstract
Theoretical calculations of the Raman cross-sections for resonant intervalley phonon scattering near the indirect gap and the higher direct gap energies in many-valley semiconductors are reported, and the possibility of observing these effects experimentally is discussed. Band structure calculations are employed to compute the intervalley deformation potentials and the cross-sections of light scattering processes for typical semiconductors.
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© 1976 Plenum Press, New York
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Lin-Chung, P.J., Ngai, K.L. (1976). Intervalley Phonon Raman Scattering in Many-Valley Semiconductors. In: Bendow, B., Birman, J.L., Agranovich, V.M. (eds) Theory of Light Scattering in Condensed Matter. Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-4301-1_11
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DOI: https://doi.org/10.1007/978-1-4613-4301-1_11
Publisher Name: Springer, Boston, MA
Print ISBN: 978-1-4613-4303-5
Online ISBN: 978-1-4613-4301-1
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