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Growth Anisotropy of Gallium Arsenide and Germanium in Gas-Transport Systems

  • L. G. Lavrent’eva

Abstract

Interest has recently increased in crystallization in gas-transport systems, because the process is of technological importance and also because one needs to elucidate the growth conditions. An advantage of the method is that one can carry out the crystallization at temperatures below the melting point while maintaining conditions close to equilibrium. There are many papers on the morphology of crystals obtained by deposition from the vapor.

Keywords

Gallium Arsenide Consultant Bureau Growth Step Growth Anisotropy GaAs Film 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Consultants Bureau, New York 1976

Authors and Affiliations

  • L. G. Lavrent’eva

There are no affiliations available

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