Abstract
Interest has recently increased in crystallization in gas-transport systems, because the process is of technological importance and also because one needs to elucidate the growth conditions. An advantage of the method is that one can carry out the crystallization at temperatures below the melting point while maintaining conditions close to equilibrium. There are many papers on the morphology of crystals obtained by deposition from the vapor.
This is a preview of subscription content, log in via an institution.
Buying options
Tax calculation will be finalised at checkout
Purchases are for personal use only
Learn about institutional subscriptionsPreview
Unable to display preview. Download preview PDF.
Literature Cited
N. N. Sheftal’ and E. S. Givargizov. Kristallografiya, 9 (5):686 (1964).
E. S. Givargizov. Kristallografiya, 9 (6):902 (1964).
Kh. A. Magomedov and N. N. Sheftal’. Kristallografiya, 9 (6):902 (1964).
Kh. A. Magomedov and N. N. Sheftal’. Izv. AN SSSR, Neorg. Mat., 1 (12):2113 (1965).
S. Mendelson. Single-Crystal Films, Pergamon Press (1964), 251.
F. A. Kuznetsov. In:Growth and Structure of Single-Crystal Semiconductor Films [in Russian], part 1, Nauka, Novosibirsk (1968), p. 50.
R. C. Sangster. Compound Semiconductors, Vol. 1, Preparation of III-V compounds, New York (1963).
L. G. Lavrent’eva, V. A. Moskovkin, and M. P. Yakubenya. Izv. VUZ, Fizika, No. 3, p. 69 (1970).
L. G. Lavrent’eva, Yu. Kataev, V. A. Moskovkin, and M. P. Yakubenya. Kristallund Technik, 6 (5):607 (1971).
A. V. Belyustin, A. V. Kolina, and N. S. Stepanova. In:Growth of Crystals, Vol. 3, Consultants Bureau, New York (1962), p. 111.
A. N. Stepanova. Proceedings of the Fourth Ail-Union Conference on Crystal Growth. Crystallization Mechanism and Kinetics [in Russian], part 2, Izd. AN Arm. SSR, Erevan (1972), p. 81.
L. G. Lavrent’eva, V. D. Redkov, N. N. Bakin, and V. A. Ermolaev. In:Gallium Arsenide [in Russian], Vol. 2, Izd. Tomsk. Univ. (1969), p. 185.
L. G. Lavrent’eva, I. S. Zakharov, I. V. Ironin, and L. M. Krasil’nikova. Proceedings of the Fourth All-Union Conference on Crystal Growth. Crystallization Mechanism and Kinetics [in Russian], part 2, Izd. AN Arm. SSR, Erevan (1972), p. 70.
H. C. Abbink, R. M. Broudy, and G. P. McCarthy. J. Appl. Phys., 39 (10):4673 (1968).
L. G. Lavrent’eva, M. D. Vilisova, I. V. Ivanin, L. M. Krasilnikova, Yu. M. Rumyantsev, and M. P. Yakubenya. Izv. VUZ, Fizika, No. 2 (1973).
W. Honigman. Crystal Growth and Form [Russian translation], IL, Moscow (1961).
L. G. Lavrent’eva, L. G. Nesteryuk, and V. M. Sennikova. Izv. VUZ, Fizika, No. 6, p. 111 (1972).
A. A. Chernov. In:Growth of Crystals, Consultants Bureau, New York (1962), p. 31.
L. G. Lavrent’eva, M. P. Yakubenya, O. M. Ivleva, and V. A. Moskovkin, In:Growth of Crystals, Vol. 9, Consultants Bureau, New York (1975), p. 249.
L. G. Lavrent’eva, Yu. G. Kataev, and V. A. Moskovkin. Izv. VUZ, Fizika, No. 11, p. 141 (1970).
A. E. Blakeslee. Trans. Metallurg. Soc. AIME, 245:577 (1969).
L. G. Lavrent’eva and I. S. Zakharov, Proc. Internat. Conf. Phys. and Chem. Semicond., Heterojunction and Layer Structures, Budapest 1:253 (1970).
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 1976 Consultants Bureau, New York
About this chapter
Cite this chapter
Lavrent’eva, L.G. (1976). Growth Anisotropy of Gallium Arsenide and Germanium in Gas-Transport Systems. In: Sheftal’, N.N. (eds) Growth of Crystals. Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-4256-4_12
Download citation
DOI: https://doi.org/10.1007/978-1-4613-4256-4_12
Publisher Name: Springer, Boston, MA
Print ISBN: 978-1-4613-4258-8
Online ISBN: 978-1-4613-4256-4
eBook Packages: Springer Book Archive