Boron Profiles and Diffusion Behavior in SiO2-Si Structures
Boron profiles in SiO2-Si structures have been investigated by means of the the 10B (N,α)7 Li-reaction and by Hall-effect and sheet-resistivity measurements combined with anodic stripping. Implantations were performed into thermally oxidized silicon with subsequent annealing, and into bare silicon which was annealed after implantation either in an oxidizing or an inert atmosphere. At 900°C the segregation coefficient of boron at the SiO2-Si interface is between 10 and 15. The range and range straggling of 10B were found to be indistinguishable from those of 11B. Therefore for measuring purposes, 10B can be used instead of 11B.
KeywordsSteam Arsenic Boron
Unable to display preview. Download preview PDF.
- 1.J. W. Mayer, L. Eriksson and J. A. Davies, Ion Implant, in Semicond., New York, Academic Press (1970)Google Scholar
- 3.B.L. Crowder, J.F. Ziegler, and G.W. Cole in Ion Implant. in Semicond. and Other Materials, New York, Plenum Press. B.L. Crowder Ed. p. 257 (1973)Google Scholar
- 4.K, Müller, R. Henkelmann and H. Boroffka, Nucl. Instr. Meth. 128, 417 (1975).Google Scholar
- 7.J.F. Gibbons, W.S. Johnson, S.W. Mylroie, Projected Range Statistics, Dowden, Hutchinson & Ross, Inc., Stroundsburg, Pa. (1975).Google Scholar
- 10.J. P. Biersack, D. Fink, p. 211 in Ion Implantation in Semi-conductors and Other Materials, Plenum Press, New York, B. L. Crowder Ed. (1973).Google Scholar
- 13.J.L. Combasson, J. Bernard, G. Guernet, N. Hilleret and M. Bruel, in Ion Implantation in Semiconductors and Other Materials, Plenum Press, New York, B.L. Crowder Ed., p. 285 (1973).Google Scholar