Boron Profiles and Diffusion Behavior in SiO2-Si Structures

  • H. Ryssel
  • H. Kranz
  • J. Biersack
  • K. Müller
  • R. A. Henkelmann


Boron profiles in SiO2-Si structures have been investigated by means of the the 10B (N,α)7 Li-reaction and by Hall-effect and sheet-resistivity measurements combined with anodic stripping. Implantations were performed into thermally oxidized silicon with subsequent annealing, and into bare silicon which was annealed after implantation either in an oxidizing or an inert atmosphere. At 900°C the segregation coefficient of boron at the SiO2-Si interface is between 10 and 15. The range and range straggling of 10B were found to be indistinguishable from those of 11B. Therefore for measuring purposes, 10B can be used instead of 11B.


Diffusion Behavior Electrical Method Segregation Coefficient Bare Silicon Electrical Profile 
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Copyright information

© Plenum Press, New York 1977

Authors and Affiliations

  • H. Ryssel
    • 1
  • H. Kranz
    • 1
  • J. Biersack
    • 2
  • K. Müller
    • 3
  • R. A. Henkelmann
    • 3
  1. 1.Institut für Festkörpertechnologie8 München 60Germany
  2. 2.Hahn-Meitner-Institut1 Berlin 39Germany
  3. 3.Institut für Radiochemie der TU MünchenGarchingGermany

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