Resistance Control of SnO2 Films by Ion Implantation
Transparent-conductive SnO2 films have been prepared by means of ion implantation. An appropriate amount of Antimony atom is implanted into CVD polycrystalline SnO2 films. Using this implantation doping, the sheet resistance of CVD SnO2 films can be controlled precisely at any desirable values. A dose of about 1 × 1016 Sb ions/cm2 brings down the sheet resistivity to such a low value as a commercial goal of 500 Ω/sq, no matter what initial sheet resistivity value is used. A tentative control equation is proposed from the experiment. The Sb atom distribution implanted into the polycrystalline SnO2 film is also investigated by an ion microanalyzer. The peak is a typical amorphus one and the projected range is around 250 Å at 60 keV. An annealing at 650 °C does not appreciably affect the distribution of implanted atom.
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