Ion Implanted Solar Cells
Ion implantation is investigated as a technique to fabricate solar cells on monocrystalline silicon. The effects of implanted species (As and P), implanted dopant concentration (1018–1021 cm-3), implant temperature(55° to 300°K) and annealing temperature (700° to 900°C) have been studied. Some progress has been made toward optimization of the various parameters.
KeywordsPhosphorus Recombination Arsenic Boron Resis
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