Ion Implanted Solar Cells

  • J. B. Neilson
  • T. M. Vanderwel
  • J. Shewchun
  • D. A. Thompson


Ion implantation is investigated as a technique to fabricate solar cells on monocrystalline silicon. The effects of implanted species (As and P), implanted dopant concentration (1018–1021 cm-3), implant temperature(55° to 300°K) and annealing temperature (700° to 900°C) have been studied. Some progress has been made toward optimization of the various parameters.


Solar Cell Carrier Lifetime Short Circuit Current Solar Simulator Junction Depth 
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Copyright information

© Plenum Press, New York 1977

Authors and Affiliations

  • J. B. Neilson
    • 1
  • T. M. Vanderwel
    • 1
  • J. Shewchun
    • 1
  • D. A. Thompson
    • 1
  1. 1.Department of Engineering PhysicsMcMaster UniversityHamiltonCanada

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