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Ion Implanted Solar Cells

  • J. B. Neilson
  • T. M. Vanderwel
  • J. Shewchun
  • D. A. Thompson

Abstract

Ion implantation is investigated as a technique to fabricate solar cells on monocrystalline silicon. The effects of implanted species (As and P), implanted dopant concentration (1018–1021 cm-3), implant temperature(55° to 300°K) and annealing temperature (700° to 900°C) have been studied. Some progress has been made toward optimization of the various parameters.

Keywords

Solar Cell Carrier Lifetime Short Circuit Current Solar Simulator Junction Depth 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Plenum Press, New York 1977

Authors and Affiliations

  • J. B. Neilson
    • 1
  • T. M. Vanderwel
    • 1
  • J. Shewchun
    • 1
  • D. A. Thompson
    • 1
  1. 1.Department of Engineering PhysicsMcMaster UniversityHamiltonCanada

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