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Annealing Behaviour of Proton Bombardment Damage in P-Type Silicon

  • Amitabh Jain
  • B. J. Smith
  • J. Stephen

Abstract

Capacitance-voltage measurements have been made on silicon n+p diodes which have been implanted with protons at 400 keV. The position of the damage is such that the majority carrier profile in this region is obtained. Measurements made after 50°C annealing steps from 50°C to 700°C show four distinct types of defect. These appear in different temperature ranges. One of these defects which occurs in the annealing temperature range 100°C-300°C has been identified as the silicon divacancy. This has been deduced from estimates of the energy of the defect levels and their behaviour at room temperature and at 132°K. The remaining three defects have been compared rath those reported elsewhere but their physical structure is not clearly identified.

Keywords

Reverse Bias Donor Level Annealing Behavior Annealing Temperature Range Deep Acceptor 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. 1.
    B J Smith, J Stephen and P J Hammersley, Radiat. Effects 26, 17 (1975)CrossRefGoogle Scholar
  2. 2.
    DP Kennedy, P C Murley and W Kleinfelder, IBM J. Res. Develop. 12, 399 (1968)CrossRefGoogle Scholar
  3. 3.
    M Schulz, Appl. Phys. Lett. 23, 31 (1973)ADSCrossRefGoogle Scholar
  4. L C Kimerling, J. Appl. Phys. 45, 1839 (1974)ADSCrossRefGoogle Scholar
  5. 5.
    A Jain, Ph. D. Thesis, Indian Institute of Technology, Delhi; in preparationGoogle Scholar
  6. 6.
    I Manning and G P Mueller, Comput. Phys. Commun. 7, 85 (1974)ADSCrossRefGoogle Scholar
  7. 7.
    L Northcliffe and R Schilling, Nucl. Data Tables 7,Nos. 3–4 (1970)Google Scholar
  8. 8.
    L C Kimerling and J M Poate, Lattice Defects in Semiconductors, 1974, ed. F A Huntley (The Institute of Physics), 126 (1975)Google Scholar
  9. 9.
    SI Tan, B S Berry and W F J Frank, Ion Implantation in Semiconductors and Other Materials, ed B L Crowder (Plenum), 19 (1973)Google Scholar
  10. 10.
    A Seeger and W Frank, Radiation Damage and Defects in Semiconductors, ed J E Whitehouse (The Institute of Physics, London), 262 (1973)Google Scholar
  11. 11.
    G D Watkins, Phys. Rev. B 12, 5824 (1975)MathSciNetADSCrossRefGoogle Scholar
  12. 12.
    B Henderson, Defects in Crystalline Solids, (Arnold, 1972 )Google Scholar
  13. 13.
    A J R de Kock, Appl. Phys. Lett. 16, 100 (1970)ADSCrossRefGoogle Scholar
  14. 14.
    L J Cheng, J C Corelli, J W Corbett and G D Watkins, Phys. Rev. 152, 761 (1966)ADSCrossRefGoogle Scholar
  15. 15.
    H J Stein, Radiation Effects in Semiconductors, eds J W Corbett and G D Watkins (Gordon and Breach), 125 (1971)Google Scholar
  16. 16.
    IP Kozlov, A G Litvinko, P F Lugakov, S V Mishuk and V D Tkachev, Sov. Phys. - Semicond. 6 1743 (1973)Google Scholar
  17. 17.
    M T Lappo and V D Tkachev, Sov. Phys. - Semicond. 5, 1411 (1972)Google Scholar

Copyright information

© Plenum Press, New York 1977

Authors and Affiliations

  • Amitabh Jain
    • 2
  • B. J. Smith
    • 1
  • J. Stephen
    • 1
  1. 1.Electronics and Applied Physics DivisionHarwell, OxfordshireEngland
  2. 2.Physics Dept.Indian Institute of TechnologyNew DelhiIndia

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