Formation of Highly-Doped Thin Layers by Using Knock-on Effect
Optimum conditions in the recoil implantation to form highly-doped thin layers on the semiconductor surfaces have been discussed by using He and N ions backscattering techniques and electrical measurements. A thin n-type layer with sheet resistivity of 300 Ω/□ was obtained on a p-type Si wafer by implantation of 100 keV Si ions through an As film at a dose of 3x1014 cm-2. In case of an Sb film the sheet resistivity was about 10 times higher than that in the As film.
KeywordsOptimum Thickness Sheet Resistivity Recoil Atom Tetrahedral Interstitial Site Recoil Implantation
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