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Formation of Highly-Doped Thin Layers by Using Knock-on Effect

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Ion Implantation in Semiconductors 1976

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Abstract

Optimum conditions in the recoil implantation to form highly-doped thin layers on the semiconductor surfaces have been discussed by using He and N ions backscattering techniques and electrical measurements. A thin n-type layer with sheet resistivity of 300 Ω/□ was obtained on a p-type Si wafer by implantation of 100 keV Si ions through an As film at a dose of 3x1014 cm-2. In case of an Sb film the sheet resistivity was about 10 times higher than that in the As film.

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References

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Author information

Authors and Affiliations

  1. Tokyo Institute of Technology, Nagatsuda, Midoriku, Yokohama 227, Japan

    H. Ishiwara & S. Furukawa

Authors
  1. H. Ishiwara
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  2. S. Furukawa
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Editor information

Editors and Affiliations

  1. University of Colorado, Boulder, Colorado, USA

    Fred Chernow

  2. Sandia Laboratories, Albuquerque, New Mexico, USA

    James A. Borders  & David K. Brice  & 

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© 1977 Plenum Press, New York

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Ishiwara, H., Furukawa, S. (1977). Formation of Highly-Doped Thin Layers by Using Knock-on Effect. In: Chernow, F., Borders, J.A., Brice, D.K. (eds) Ion Implantation in Semiconductors 1976. Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-4196-3_39

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  • DOI: https://doi.org/10.1007/978-1-4613-4196-3_39

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4613-4198-7

  • Online ISBN: 978-1-4613-4196-3

  • eBook Packages: Springer Book Archive

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