Annealing of Room Temperature Implants of Indium in Silicon
The implantation and annealing of the heavy group III p-type dopants in silicon (Ga,In,TL) has received much less attention than boron. However these dopants have a number of specialized applications, and the recent use of indium implantation for high value resistors (l) was part of the motivation for this study.
KeywordsMigration Argon Boron Nitride Gallium
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