Annealing of Room Temperature Implants of Indium in Silicon

  • P. Blood
  • W. L. Brown
  • G. L. Miller

Abstract

The implantation and annealing of the heavy group III p-type dopants in silicon (Ga,In,TL) has received much less attention than boron. However these dopants have a number of specialized applications, and the recent use of indium implantation for high value resistors (l) was part of the motivation for this study.

Keywords

Migration Argon Boron Nitride Gallium 

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References

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Copyright information

© Plenum Press, New York 1977

Authors and Affiliations

  • P. Blood
    • 1
  • W. L. Brown
    • 2
  • G. L. Miller
    • 2
  1. 1.Mullard Research LaboratoriesRedhill, SurreyEngland
  2. 2.Bell LaboratoriesMurray HillUSA

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