Abstract
The implantation and annealing of the heavy group III p-type dopants in silicon (Ga,In,TL) has received much less attention than boron. However these dopants have a number of specialized applications, and the recent use of indium implantation for high value resistors (l) was part of the motivation for this study.
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© 1977 Plenum Press, New York
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Blood, P., Brown, W.L., Miller, G.L. (1977). Annealing of Room Temperature Implants of Indium in Silicon. In: Chernow, F., Borders, J.A., Brice, D.K. (eds) Ion Implantation in Semiconductors 1976. Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-4196-3_3
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DOI: https://doi.org/10.1007/978-1-4613-4196-3_3
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