Annealing of Room Temperature Implants of Indium in Silicon
The implantation and annealing of the heavy group III p-type dopants in silicon (Ga,In,TL) has received much less attention than boron. However these dopants have a number of specialized applications, and the recent use of indium implantation for high value resistors (l) was part of the motivation for this study.
KeywordsAmorphous Layer Indium Retention Indium Atom Indium Gallium Regrowth Rate
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