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Annealing of Room Temperature Implants of Indium in Silicon

  • P. Blood
  • W. L. Brown
  • G. L. Miller

Abstract

The implantation and annealing of the heavy group III p-type dopants in silicon (Ga,In,TL) has received much less attention than boron. However these dopants have a number of specialized applications, and the recent use of indium implantation for high value resistors (l) was part of the motivation for this study.

Keywords

Amorphous Layer Indium Retention Indium Atom Indium Gallium Regrowth Rate 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

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Copyright information

© Plenum Press, New York 1977

Authors and Affiliations

  • P. Blood
    • 1
  • W. L. Brown
    • 2
  • G. L. Miller
    • 2
  1. 1.Mullard Research LaboratoriesRedhill, SurreyEngland
  2. 2.Bell LaboratoriesMurray HillUSA

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