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Segregation, Supersaturated Alloys and Semiconductor Surfaces

  • Chapter
Surface Modification and Alloying

Part of the book series: NATO Conference Series ((SNS,volume 8))

Abstract

In pulsed laser annealing of ion implanted semiconductors, the rapid deposition of energy into the near surface region leads to melting of the surface to a depth of several thousand angstroms, followed by liquid phase epitaxial regrowth from the underlying substrate (Ferris et al., 1979; White and Peercy, 1980; Gibbons et al., 1981; Appleton and Celler, 1982). In silicon, the velocity of the liquid-solid interface during solidification is calculated (Wang et al., 1978; Baeri et al., 1978) to be several meters/sec and this is confirmed (Galvin et al., 1982) by recent measurements of time-resolved electrical conductivity of the molten layer. Following solidification, the annealed region is observed to be free of any extended defects (Narayan et al., 1978; White et al., 1979), and Group (III,V) impurities are observed to be highly substitutional in the lattice even when their concentrations greatly exceed equilibrium solubility limits (White et al., 1980).

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Author information

Authors and Affiliations

  1. Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee, USA

    C. W. White & D. M. Zehner

  2. Istituto di Struttura della Materia, Universita di Catania, Italy

    S. U. Campisano

  3. Royal Signals and Radar Establishment, Malvern, England

    A. G. Cullis

Authors
  1. C. W. White
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  2. D. M. Zehner
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  3. S. U. Campisano
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  4. A. G. Cullis
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Editor information

Editors and Affiliations

  1. Bell Laboratories, Murray Hill, New Jersey, USA

    J. M. Poate  & D. C. Jacobson  & 

  2. University of Catania, Catania, Italy

    G. Foti

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© 1983 Plenum Press, New York

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White, C.W., Zehner, D.M., Campisano, S.U., Cullis, A.G. (1983). Segregation, Supersaturated Alloys and Semiconductor Surfaces. In: Poate, J.M., Foti, G., Jacobson, D.C. (eds) Surface Modification and Alloying. NATO Conference Series, vol 8. Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-3733-1_4

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  • DOI: https://doi.org/10.1007/978-1-4613-3733-1_4

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  • Print ISBN: 978-1-4613-3735-5

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