Tunneling Phenomena in Multibarrier Structures

  • Johnson Lee
  • M. O. Vassell
  • H. F. Lockwood

Abstract

Results of a theoretical analysis of electron tunneling in a finite GaXAl1-XAs superlattice are presented. A general formalism is discussed for calculating the transmission coefficient (the ratio of the transmitted to the incident fluxes) by direct numerical solutions of the Schrodinger equation for arbitrary potential profiles. Trends in the dependence of the transmission coefficient on electron energy are examined. Our simple model neglects sources and sinks in the intermediate layers. The numerical calculations show quantitative differences with results obtained earlier by R. Tsu and L. Esaki1.

Keywords

GaAs Sylvan 

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References

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    R. Tsu and L. Esaki, Appl. Phys. Lett., 22, 562 (1973).ADSCrossRefGoogle Scholar
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    L. L. Chang, L. Esaki, and R. Tsu, Appl. Phys. Lett., 24, 38 593 (1974).ADSCrossRefGoogle Scholar
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    D. Bohm, “Quantum Theory”, (Prentice-Hall, N.J., 1951) Ch. 11Google Scholar
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    R. Dingle, “Adv. in Solid State Phys. XV”, ( H.J. Queisser ed. Pergamon-Vieweg, Braunschweig, 1975 ) p. 21.Google Scholar
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Copyright information

© Plenum Press, New York 1984

Authors and Affiliations

  • Johnson Lee
    • 1
  • M. O. Vassell
    • 1
  • H. F. Lockwood
    • 1
  1. 1.GTE Laboratories, IncorporatedWalthamUSA

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