Modeling of Surface Scattering in the Monte Carlo Simulation of Short Channel MOSFET
This paper presents a Monte Carlo calculation of electron transport in the silicon inversion layer. The simulation results using both quantum mechanical model and classical diffusive model are given. For the former, the model used for simulation is the same as used by Ferry. The results are compared with those of Ferry and the data of Fang and Fowler. For the latter, the classical partial diffusive model is employed for the surface scattering. The critical angle separating specular from diffusive scattering is determined from the experimental data. A good agreement with the data of Cooper and Nelson is obtained for the velocity -field curve over a wide range of field intensity. The application of these models to the MOSFET device structure will be discussed briefly.
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