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Spallation Neutron Damage in Group IV, III–V and II–VI Semiconductors at 5 K

  • Chapter
Neutron Transmutation Doping of Semiconductor Materials

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Abstract

Spallation neutrons from the Argonne Intense Pulsed Neutron Source have been used to investigate low temperature (5 K) neutron damage to a representative group of IV, III–V and II–VI semi-conductors. Carrier removal rates and isochronal annealing are presented for all the semiconductors investigated while Deep-Level Transient Spectroscopic experiments on n-type silicon are discussed.

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Author notes

  1. J. M. Meese

    Present address: Research Reactor Facility, University of Missouri, Columbia, MO, 65211, USA

Authors and Affiliations

  1. Materials Science Division, Argonne National Laboratory, 9700 South Cass Avenue, Argonne, Illinois, 60439, USA

    R. C. Birtcher, T. L. Scott & J. M. Meese

Authors
  1. R. C. Birtcher
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  2. T. L. Scott
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  3. J. M. Meese
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Editor information

Editors and Affiliations

  1. National Bureau of Standards, Washington, D.C., USA

    Robert D. Larrabee

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© 1984 Plenum Press, New York

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Birtcher, R.C., Scott, T.L., Meese, J.M. (1984). Spallation Neutron Damage in Group IV, III–V and II–VI Semiconductors at 5 K. In: Larrabee, R.D. (eds) Neutron Transmutation Doping of Semiconductor Materials. Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-2695-3_4

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  • DOI: https://doi.org/10.1007/978-1-4613-2695-3_4

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4612-9675-1

  • Online ISBN: 978-1-4613-2695-3

  • eBook Packages: Springer Book Archive

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