Abstract
The infrared absorption spectrum of indium-doped silicon has been investigated in N.T.D. compensated material and compared with the spectrum in the uncompensated material. Besides the decrease in the equilibrium concentration of optically active indium, the presence of ionized donors and acceptors produces a broadening and a shift of the absorption lines, and makes it possible to detect a forbidden transition. Gradual neutralization of the ionized impurities by controlled optical pumping shows the influence of compensation on the detectability of the highly excited levels. The decay with time of the out-of-equilibrium indium absorption is recorded and attributed to pair recombination. Finally, a brief comparison of the optical calibration factors for indium concentration in silicon is given.
This is a preview of subscription content, log in via an institution to check access.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
References
T. T. Braggins, H.M. Hobgood, J.C. Swartz, and R.N. Thomas, High infrared responsivity Indium-doped silicon detector material compensated by neutron transmutation, I.E.E.E. Transactions Electr. Dev. ED-27: 2 (1980).
B. Pajot, D. Debarre, and D. Roche, Neutron transmutation as a method to calibrate the infrared absorption of indium in silicon, J. Appl. Phys. 52:5774 0981).
A. Onton, P. Fisher, and A.K. Ramdas, Spectroscopic investigations of group-III acceptor states in silicon, Phys.Rev. 163:686 (1967).
B.C. Covington, R.J. Harris, and R.J. Spry, Observation of additional excited-state lines of indium in silicon, Phys. Rev.B 22:778 (1980).
A. Baldereschi and N.O. Lipari, Interpretation of acceptor spectra in Si and Ge, in: “Proc. 13th Conf. Phys. Semiconductors”, F.G. Fumi, Ed. Tipografia Marves, Rome (1976).
P. R. Bratt, Impurity germanium and silicon infrared detectors, in: “Semiconductors and Semimetals, Vol. 12”, R. K. Willardson and A. C. Beer, Eds. Academic Press, New York (1977).
N.Lipari, M.L.W. Thewalt, W.Andreoni, and A.Baldereschi, Central cell affects in the shallow acceptor spectra of Si and Ge, J. Phys. Soc. Japan 49:suppl.A 165 (1980).
B. 0. Sunstrom, L. Huldt, and N.G. Nilsson, Photoinduced infra-red absorption and luminescence in Indium-doped silicon, Physica Scripta18: 414 (1978).
U. 0. Ziemelis and R.R. Parsons, Sharp line donor-acceptor pair luminescence in silicon, Can. J. Phys. 59:T8U (1981).
C.E. Jones, D.Schafer, W.Scott, and R.J. Hager, Carbon acceptor pair centers (X centers) in silicon, J. Appl.Phys. 52:5148 (1981).
A. Tardella and B. Pajot, The infrared spectrum of indium in silicon revisited, J. Physique 43:1789 (1982)
W.R. Thurber, R.L. Mattis, Y.M. Liu, and J.J. Filliben, Resistivity-dopant density relationship for boron-doped silicon, J.Electrochem.Soc. 127:2291 (1980).
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 1984 Plenum Press, New York
About this chapter
Cite this chapter
Pajot, B., Tardella, A. (1984). Compensation Effects in N.T.D. Indium Doped Silicon. In: Larrabee, R.D. (eds) Neutron Transmutation Doping of Semiconductor Materials. Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-2695-3_19
Download citation
DOI: https://doi.org/10.1007/978-1-4613-2695-3_19
Publisher Name: Springer, Boston, MA
Print ISBN: 978-1-4612-9675-1
Online ISBN: 978-1-4613-2695-3
eBook Packages: Springer Book Archive