Abstract
Today, dislocation-free float-zoned ingots are routinely grown free of swirls. However, after neutron-transmutation doping and after annealing to restore electrical properties, these ingots may show swirls after preferential etching. Statistical evidence indicates that, if both oxygen and carbon are present in concentrations less than 1 ppma (5 × 1016 atoms/cm3), then it is oxygen that causes swirls to form. The lower threshold of oxygen for swirl formation appears to be 0.15 ppma. This hypothesis has been experimentally verified by adding small amounts of oxygen during regrowth to previously swirl-free neutron-transmutation doped ingots. A second round of irradiation and annealing then produced swirls in these ingots. The paper presents evidence that neither the zone refiner nor the zone-refining process induced swirls, so that the most likely source of the oxygen is the polycrystalline silicon itself.
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Reference
A.J.R. de Kock, Applied Physics Letters 16, 100 (1970).
A.J.R. deKock, Point Defect Condensation in Dislocation-free Silicon Crystals, in Semiconductor Silicon 1977, p.p. 508, H. R. Huff and E. Sirtl, editors, The Electrochemical Society, Princeton, N.J.
H. Föil, H. 0. Kolbesen, and W. Frank, Phys. Stat. Sol. (a), 1975, 29: 83.
A.J.R. de Kock, P. J. Roksnoer, and P.G.T. Boonen, Microdefects in Swirl-Free Silicon Crystals, in Semiconductor Silicon 1973, pp. 83, H. R. Huff and R. R. Burgess, editors, The Electrochemical Society, Princeton, N.J.
H. Föil, U. Gösele, and B. 0. Kolbesen, Swirl Defects in Silicon, in ref. 2, page 565.
L. Jastrzebski, P. A. Levine, W. A. Fisher, A. D. Cope, E. D. Savoye and W. N. Henry, Cosmetic Defects in CCD Imagers, Journal Electrochemical Society, Vol. 128, No. 4, April 1981, pp. 885.
R. C. Newman, Impurity Interactions with Structural Defects in Irradiated Silicon, in “Neutron-Transmutation Doped Silicon”, Jens Guldberg, editor, Plenum Press, New York (1981).
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© 1984 Plenum Press, New York
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Kramer, H.G. (1984). Swirls in Neutron-Transmutation Doped Float-Zoned Silicon. In: Larrabee, R.D. (eds) Neutron Transmutation Doping of Semiconductor Materials. Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-2695-3_18
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DOI: https://doi.org/10.1007/978-1-4613-2695-3_18
Publisher Name: Springer, Boston, MA
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