Summary
A rapid accurate method for characterizing polycrystal silicon for residual electrically-active impurities has been developed based on the simultaneous determination of boron, phosphorus, arsenic and aluminum in the 10-10 atoms/atom range in silicon monocrystal by photoluminescence. The method was originally calibrated on the basis of resistivity, but this leads to a relatively large uncertainty, especially for donor impurities. This paper describes the recalibration of the method for phosphorus by NTD using a carefully controlled neutron fluence. The agreement between the three methods of measuring impurity content are presented and the statistical reproducibility of the method is discussed.
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References
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© 1984 Plenum Press, New York
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Stone, B.D., Henry, A.D., Clem, P.L., Shive, L.W., Gunn, S.L. (1984). Calibration of the Photoluminescence Technique for Determination of Phosphorus in Silicon by Neutron Transmutation Doping. In: Larrabee, R.D. (eds) Neutron Transmutation Doping of Semiconductor Materials. Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-2695-3_17
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DOI: https://doi.org/10.1007/978-1-4613-2695-3_17
Publisher Name: Springer, Boston, MA
Print ISBN: 978-1-4612-9675-1
Online ISBN: 978-1-4613-2695-3
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