Abstract
Deep levels in semiconductors have been extensively studied using capacitance transients. This technique is referred to as Deep Level Transient Spectroscopy (DLTS). A similar technique using transient currents is called Transient Current Spectroscopy (TCS). The basis of both DLTS and TCS are discussed, and some advantages of TCS over DLTS are pointed out. Some examples of past applications of DLTS to neutron irradiated silicon are given. The present application of TCS to defects in silicon is presented. Defect energy levels, capture cross sections and spatial profiles have been determined using TCS.
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© 1984 Plenum Press, New York
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Farmer, J.W., Nugent, J.C. (1984). Transient Current Spectroscopy of Neutron Irradiated Silicon. In: Larrabee, R.D. (eds) Neutron Transmutation Doping of Semiconductor Materials. Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-2695-3_16
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DOI: https://doi.org/10.1007/978-1-4613-2695-3_16
Publisher Name: Springer, Boston, MA
Print ISBN: 978-1-4612-9675-1
Online ISBN: 978-1-4613-2695-3
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