Skip to main content
SpringerLink
Log in

Performance and Application in High Energy Physics of Passivated Ion-Implanted Silicon Detectors

  • Chapter
Search for Charm, Beauty, and Truth at High Energies

Part of the book series: Ettore Majorana International Science Series ((POLS,volume 16))

  • 73 Accesses

Summary

The manufacturing of Ion-implanted Detectors (IP detector) is made by applying the well known techniques of the planar process: oxide passivation, photo engraving and ion implantation. Any desired detector shape can be obtained with small tolerances in geometrical and electrical properties.

Presented by P. Burger.

This is a preview of subscription content, log in via an institution to check access.

Access this chapter

Log in via an institution
Chapter
USD 29.95
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
eBook
USD 39.99
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
Softcover Book
USD 54.99
Price excludes VAT (USA)
  • Compact, lightweight edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info

Tax calculation will be finalised at checkout

Purchases are for personal use only

Institutional subscriptions

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. G. Bertolini and A. Coche, Semiconductor Detectors, North Holland (1968).

    Google Scholar 

  2. J. Kemmer, Nucl. Inst, and Meth. 169 (1980) 499,

    Google Scholar 

  3. G. Keil and E. Lindner, Nucl. Inst, and Meth. 101 (1972) 43.

    Article  Google Scholar 

  4. H. Grahmann and S. Kalbitzer, Nucl. Inst, and Meth. 136 (1976) 145.

    Article  Google Scholar 

  5. J. Kemmer and W. Wagner, Nucl. Inst, and Meth. under press.

    Google Scholar 

  6. A. Hyder, Nucl. Inst, and Meth. 187 (1981) 595.

    Article  Google Scholar 

  7. S.R. Amendola et al., Nucl. Instr. and Meth. 176 (1980) 449.

    Article  Google Scholar 

  8. M. Adamovich et al., Status report on beauty test experiment (P-137), CERN/SPSC/81–17 (1981).

    Google Scholar 

  9. E. Heijne et al., Nucl. Inst, and Meth. 178 (1980) 331.

    Article  Google Scholar 

  10. M. Artuso et al., 10th Inter. Symp. on Nuclear Electronics, Dresden (1980).

    Google Scholar 

  11. FRAMM collaboration, CERN.

    Google Scholar 

  12. E. Heijne and P. Jarron, IEEE Trans. Nucl. Sci. NS 29 (1982) 405.

    Article  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Fakultät für Physik der Technischen Universität München, 8046, Garching, Germany

    J. Kemmer

  2. Enertec-Schlumberger, 1, Parc des Tanneries, 67380, Strasbourg, Lingolsheim, France

    P. Burger & R. Henck

  3. CERN — European Organisation for Nuclear Research, 1211, Geneva 23, Switzerland

    E. Heijne

Authors
  1. J. Kemmer
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. P. Burger
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. R. Henck
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. E. Heijne
    View author publications

    You can also search for this author in PubMed Google Scholar

Editor information

Editors and Affiliations

  1. Istituto di Fisica dell’ Università and Sezione INFN, Milan, Italy

    G. Bellini

  2. Massachusetts Institute of Technology, Cambridge, Massachusetts, USA

    S. C. C. Ting

Rights and permissions

Reprints and permissions

Copyright information

© 1984 Plenum Press, New York

About this chapter

Cite this chapter

Kemmer, J., Burger, P., Henck, R., Heijne, E. (1984). Performance and Application in High Energy Physics of Passivated Ion-Implanted Silicon Detectors. In: Bellini, G., Ting, S.C.C. (eds) Search for Charm, Beauty, and Truth at High Energies. Ettore Majorana International Science Series, vol 16. Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-2659-5_23

Download citation

  • DOI: https://doi.org/10.1007/978-1-4613-2659-5_23

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4612-9657-7

  • Online ISBN: 978-1-4613-2659-5

  • eBook Packages: Springer Book Archive

Publish with us

Policies and ethics

Search

Navigation