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Basic Techniques in Simulations for Advanced Process Development

  • Kit Man Cham
  • Soo-Young Oh
  • Daeje Chin
  • John L. Moll
Part of the The Springer International Series in Engineering and Computer Science book series (SECS, volume 7)

Abstract

In this chapter, the basic simulation techniques for advanced MOS process development will be described. First of all, the basic device physics of MOSFET is presented The discussion will be in very simple terms, although sufficient to allow the process engineers to understand the basic characteristics of MOSFETs and their significance. The techniques of generating the device parameters are then presented. Also to be discussed are the short channel effects such as drain-induced barrier lowering. Simulations are used to reveal details of these phenomena. The relationship between process parameters and device characteristics are discussed. Simulated results are compared with experimental results. The discussions will emphasize the GEMINI program since it is relatively simple to use.

Keywords

Threshold Voltage Channel Length Residual Current Substrate Bias Gate Bias 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Science+Business Media New York 1986

Authors and Affiliations

  • Kit Man Cham
    • 1
  • Soo-Young Oh
    • 1
  • Daeje Chin
    • 2
  • John L. Moll
    • 1
  1. 1.Hewlett-Packard LaboratoriesUSA
  2. 2.IBM—Thomas J. Watson Research CenterUSA

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