Device Simulation

  • Kit Man Cham
  • Soo-Young Oh
  • Daeje Chin
  • John L. Moll
Part of the The Springer International Series in Engineering and Computer Science book series (SECS, volume 7)

Abstract

As the dimensions of MOS devices are scaled down, the device structures become more complicated. The insulator/semiconductor interfaces are often non-planar, and the impurity profiles of the devices are complicated and may not be expressed accurately in Gaussian form. The increased complexity of the device structure is necessary for optimization of the device performance, such as minimizing the drain-induced barrier-lowering effects, or enhancing the device reliability, e.g., reducing the electric field at the drain of the MOSFET. Therefore, in the development of VLSI MOS technology, it is essential to be able to simulate the electrical characteristics of devices which have complicated structures. The GEMINI program provides this capability.

Keywords

Recombination Arsenic Boron Trench Auger 

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. [3.1]
    J. A. Greenfield and R. W. Dutton, “Nonplanar VLSI Device Analysis Using the Solution of Poisson’s Equation,”IEEE Trans. on Electron Devices, ED-27, Aug 1980, pp. 1520–1532.Google Scholar
  2. [3.2]
    S. Ogura, P. J. Tsang, W. W. Walker, D. L. Chritchlow, and J. F. Shepard, “Design Characteristics of the Lightly Doped Drain-Source (LDD) IGFET,”IEEE Trans. on Electron Devices, ED-27, Aug 1980, pp. 1359–1367.Google Scholar
  3. [3.3]
    R. D. Rung, H. Momose, and Y. Nagakubo, “Deep Trench Isolated CMOS Devices,”Tech. Digest of IEDM 1982, pp. 237–240.Google Scholar
  4. [3.4]
    K. M. Cham, S. Y. Chiang, D. Wenocur, and R. D. Rung, “Characterization and Modeling of the Trench Surface Inversion Problem for the Trench Isolated CMOS Technology,”Tech. Digest of IEDM 1983, pp. 23–26.Google Scholar
  5. [3.5]
    R. S. Verga, Matrix Iterative Analysis, Englewood Cliffs, NJ:Prentice-Hall, 1962, ch.6.Google Scholar
  6. [3.6]
    J.M. Ortega and W. C. Rheinboldt, Iterative Solution of Nonlinear Equation in Several Variables, New York:Academic Press, 1970, pp. 214–230.Google Scholar
  7. [3.7]
    T. Toyabe, “CADDET User’s Manual”, Hitachi Central LaboratoriesGoogle Scholar
  8. [3.8]
    M. S. Mock, “Analysis of Mathematical Models of Semiconductor Devices” Boole Press, Dublin, 1983.MATHGoogle Scholar
  9. [3.9]
    H. L. Stone, “Iterative Solution of Implicit Approximations of Multidimensional Partial Difference Equations,”SIAM J. Numerical Anal., 5, 1968, pp. 530–558.CrossRefMATHGoogle Scholar
  10. [3.10]
    D. L. Scharfetter and H. K. Gummel, “Large-signal Analysis of a Silicon Reed Diode Oscillator,”IEEE Trans, on Electron Devices, ED-16, pp. 64–77, Jan 1969.Google Scholar
  11. [3.11]
    K. Yamaguchi, “Field-Dependent Mobility Model for Two-Dimensional Numerical Analysis of MOSFETs,”IEEE Trans on Electron Devices, Vol ED-26, pp. 1068–1074, July 1978.CrossRefGoogle Scholar
  12. [3.12]
    K. Yamaguchi, “A Mobility Model for Carriers in the MOS Inversion Layers,”IEEE Trans, on Electron Devices, Vol Ed-30, pp. 658–663, June 1983.CrossRefGoogle Scholar
  13. [3.13]
    S. Y. Oh, P. Vande Voorde, and J. Moll, “An Empirical Mobility Model for Numerical MOSFET Simulation,”Hewlett-Packard Semiconductor Technology Conference Proc., pp. 97–104, 1984.Google Scholar
  14. [3.14]
    K. K. Thornber, “Relation of Drift Velocity to Low-Field Mobility and High Field Saturation Velocity,”J. Appl. Phys., Vol. 51, No. 4, pp. 2127–2136, April 1980.CrossRefGoogle Scholar
  15. [3.15]
    M. S. Mock, “Analysis of Mathematical Models of Semiconductor Devices,” Boole Press, Dublin, 1983.MATHGoogle Scholar
  16. [3.16]
    J. A. Meijerrink et al, “An Iterative Solution Method for Linear System of Which the Coefficient Matrix is a Symmetric M-Matrix,”Mathematics of Computation, Vol 31, No 137, Jan 1977, pp. 148–162.MathSciNetGoogle Scholar
  17. [3.17]
    J.J.Barnes, “A Two-dimensional Simulation of MESFETs,” Ph.D dissertation, University of Michigan, Ann Arbor, Aug 1975.Google Scholar
  18. [3.18]
    J. W. Slotboom et al, Solid-State Electronics, 15, 1972, pp. 1229–1235.CrossRefGoogle Scholar
  19. [3.19]
    A. Wieder, IEEE Trans. Electron Devices, ED-27, 1980, pp. 560–607.Google Scholar
  20. [3.20]
    M. S. Mock, “The SIFCOD program User’s Guide,”June 1983.Google Scholar

Copyright information

© Springer Science+Business Media New York 1986

Authors and Affiliations

  • Kit Man Cham
    • 1
  • Soo-Young Oh
    • 1
  • Daeje Chin
    • 2
  • John L. Moll
    • 1
  1. 1.Hewlett-Packard LaboratoriesUSA
  2. 2.IBM—Thomas J. Watson Research CenterUSA

Personalised recommendations