# Device Simulation

## Abstract

As the dimensions of MOS devices are scaled down, the device structures become more complicated. The insulator/semiconductor interfaces are often non-planar, and the impurity profiles of the devices are complicated and may not be expressed accurately in Gaussian form. The increased complexity of the device structure is necessary for optimization of the device performance, such as minimizing the drain-induced barrier-lowering effects, or enhancing the device reliability, e.g., reducing the electric field at the drain of the MOSFET. Therefore, in the development of VLSI MOS technology, it is essential to be able to simulate the electrical characteristics of devices which have complicated structures. The GEMINI program provides this capability.

### Keywords

Recombination Arsenic Boron Trench Auger## Preview

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### References

- [3.1]J. A. Greenfield and R. W. Dutton, “Nonplanar VLSI Device Analysis Using the Solution of Poisson’s Equation,”
*IEEE Trans. on Electron Devices*, ED-27, Aug 1980, pp. 1520–1532.Google Scholar - [3.2]S. Ogura, P. J. Tsang, W. W. Walker, D. L. Chritchlow, and J. F. Shepard, “Design Characteristics of the Lightly Doped Drain-Source (LDD) IGFET,”
*IEEE Trans. on Electron Devices*, ED-27, Aug 1980, pp. 1359–1367.Google Scholar - [3.3]R. D. Rung, H. Momose, and Y. Nagakubo, “Deep Trench Isolated CMOS Devices,”
*Tech. Digest of IEDM**1982*, pp. 237–240.Google Scholar - [3.4]K. M. Cham, S. Y. Chiang, D. Wenocur, and R. D. Rung, “Characterization and Modeling of the Trench Surface Inversion Problem for the Trench Isolated CMOS Technology,”
*Tech. Digest of IEDM**1983*, pp. 23–26.Google Scholar - [3.5]R. S. Verga,
*Matrix Iterative Analysis*, Englewood Cliffs, NJ:Prentice-Hall, 1962, ch.6.Google Scholar - [3.6]J.M. Ortega and W. C. Rheinboldt,
*Iterative Solution of Nonlinear Equation in Several Variables*, New York:Academic Press, 1970, pp. 214–230.Google Scholar - [3.7]T. Toyabe,
*“CADDET User’s Manual”*, Hitachi Central LaboratoriesGoogle Scholar - [3.8]M. S. Mock,
*“Analysis of Mathematical Models of Semiconductor Devices”*Boole Press, Dublin, 1983.MATHGoogle Scholar - [3.9]H. L. Stone, “Iterative Solution of Implicit Approximations of Multidimensional Partial Difference Equations,”
*SIAM J. Numerical Anal*., 5, 1968, pp. 530–558.CrossRefMATHGoogle Scholar - [3.10]D. L. Scharfetter and H. K. Gummel, “Large-signal Analysis of a Silicon Reed Diode Oscillator,”
*IEEE Trans, on Electron Devices*, ED-16, pp. 64–77, Jan 1969.Google Scholar - [3.11]K. Yamaguchi, “Field-Dependent Mobility Model for Two-Dimensional Numerical Analysis of MOSFETs,”
*IEEE Trans on Electron Devices*, Vol ED-26, pp. 1068–1074, July 1978.CrossRefGoogle Scholar - [3.12]K. Yamaguchi, “A Mobility Model for Carriers in the MOS Inversion Layers,”
*IEEE Trans, on Electron Devices*, Vol Ed-30, pp. 658–663, June 1983.CrossRefGoogle Scholar - [3.13]S. Y. Oh, P. Vande Voorde, and J. Moll, “An Empirical Mobility Model for Numerical MOSFET Simulation,”
*Hewlett-Packard Semiconductor Technology Conference Proc*., pp. 97–104, 1984.Google Scholar - [3.14]K. K. Thornber, “Relation of Drift Velocity to Low-Field Mobility and High Field Saturation Velocity,”
*J. Appl. Phys*., Vol. 51, No. 4, pp. 2127–2136, April 1980.CrossRefGoogle Scholar - [3.15]M. S. Mock,
*“Analysis of Mathematical Models of Semiconductor Devices,”*Boole Press, Dublin, 1983.MATHGoogle Scholar - [3.16]J. A. Meijerrink et al, “An Iterative Solution Method for Linear System of Which the Coefficient Matrix is a Symmetric M-Matrix,”
*Mathematics of Computation*, Vol 31, No 137, Jan 1977, pp. 148–162.MathSciNetGoogle Scholar - [3.17]J.J.Barnes,
*“A Two-dimensional Simulation of MESFETs,”*Ph.D dissertation, University of Michigan, Ann Arbor, Aug 1975.Google Scholar - [3.18]
- [3.19]
- [3.20]M. S. Mock,
*“The SIFCOD program User’s Guide,”*June 1983.Google Scholar