Device Simulation

  • Kit Man Cham
  • Soo-Young Oh
  • Daeje Chin
  • John L. Moll
Part of the The Springer International Series in Engineering and Computer Science book series (SECS, volume 7)


As the dimensions of MOS devices are scaled down, the device structures become more complicated. The insulator/semiconductor interfaces are often non-planar, and the impurity profiles of the devices are complicated and may not be expressed accurately in Gaussian form. The increased complexity of the device structure is necessary for optimization of the device performance, such as minimizing the drain-induced barrier-lowering effects, or enhancing the device reliability, e.g., reducing the electric field at the drain of the MOSFET. Therefore, in the development of VLSI MOS technology, it is essential to be able to simulate the electrical characteristics of devices which have complicated structures. The GEMINI program provides this capability.


Input File Mobility Model Device Structure Gate Bias Device Simulation 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


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Copyright information

© Springer Science+Business Media New York 1986

Authors and Affiliations

  • Kit Man Cham
    • 1
  • Soo-Young Oh
    • 1
  • Daeje Chin
    • 2
  • John L. Moll
    • 1
  1. 1.Hewlett-Packard LaboratoriesUSA
  2. 2.IBM—Thomas J. Watson Research CenterUSA

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