Abstract
Historically, numerical simulations of the MOS device have been tried first to understand the device operation in the subthreshold and saturation regions. In 1969, Barron [1.1] from Stanford University simulated a MOSFET transistor using a finite-difference method to study the subthreshold conduction and saturation mechanism. Vandorpe [1.2] also simulated and modeled the saturation region with the finite-difference program in 1972. After the self-aligned silicon gate technology was invented, the MOSFET device dimensions were reduced. This reduction prompted more numerical simulations to study the short-channel and narrow width effects. Mock and Kennedy [1.3] from IBM developed a finite-difference program. Hachtel [1.4] also from IBM developed the first finite-element device simulation program. Barnes [1.5] from University of Michigan also developed a finite-element device simulation program for GaAs MESFETs. Most of the programs mentioned above were developed as research tools rather than for the general user(design tools). More stress had been put on the development of a stable and fast algorithm and the implementations of the physical mechanisms rather than on the user interface.
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References
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© 1986 Springer Science+Business Media New York
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Cham, K.M., Oh, SY., Chin, D., Moll, J.L. (1986). Introduction to Numerical Simulation System. In: Computer-Aided Design and VLSI Device Development. The Springer International Series in Engineering and Computer Science, vol 7. Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-2553-6_2
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DOI: https://doi.org/10.1007/978-1-4613-2553-6_2
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