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The Surface Inversion Problem in Trench Isolated CMOS

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References

  1. S.-Y. Chiang, K. M. Cham, D. W. Wenocur, A. Hui, and R. D. Rung, “Trench Isolation Technology for MOS Applications,”Proc. of the First International Symposium on VLSI Science and Technology, 1982, pp. 339–346.

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© 1986 Springer Science+Business Media New York

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Cham, K.M., Oh, SY., Chin, D., Moll, J.L. (1986). The Surface Inversion Problem in Trench Isolated CMOS. In: Computer-Aided Design and VLSI Device Development. The Springer International Series in Engineering and Computer Science, vol 7. Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-2553-6_10

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  • DOI: https://doi.org/10.1007/978-1-4613-2553-6_10

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4612-9605-8

  • Online ISBN: 978-1-4613-2553-6

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